MRF18090AS ,1.80 Order this documentSEMICONDUCTOR TECHNICAL DATAby MRF18090A/DThe RF MOSFET Line ..
MRF18090AS ,1.80THERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case R 0.7 °C/ ..
MRF18090BS , RF POWER FIELD EFFECT TRANSISTORS
MRF18090BS , RF POWER FIELD EFFECT TRANSISTORS
MRF182 ,LATERAL N-CHANNEL BROADBAND RF POWER MOSFETsMAXIMUM RATINGSRating Symbol Value UnitDrain–Source Voltage V 65 VdcDSSGate–Source Voltage V ±20 Vd ..
MRF182S ,LATERAL N-CHANNEL BROADBAND RF POWER MOSFETsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Typ Max Uni ..
MT28F004B5 , FLASH MEMORY
MT28F008B3 , FLASH MEMORY
MT28F008B3 , FLASH MEMORY
MT28F008B3VG-9B , FLASH MEMORY
MT28F008B3VG-9T , FLASH MEMORY
MT28F008B3VG-9T , FLASH MEMORY
MRF18090AS
1.80
The RF MOSFET Line�� ����� ����� ������ � ����������
N–Channel Enhancement–Mode Lateral MOSFETsDesigned for GSM and EDGE base station applications with frequencies from
1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in class AB for GSM and EDGE cellular radio
applications. GSM and EDGE Performances, Full Frequency Band
Power Gain — 13.5 dB (Typ) @ 90 Watts (CW)
Efficiency — 52% (Typ) @ 90 Watts (CW) Internally Matched, Controlled Q, for Ease of Use High Gain, High Efficiency and High Linearity Integrated ESD Protection Designed for Maximum Gain and Insertion Phase Flatness Capable of Handling 10:1 VSWR, @ 26 Vdc, 90 Watts (CW) Output Power Excellent Thermal Stability Characterized with Series Equivalent Large–Signal Impedance Parameters
MAXIMUM RATINGS
ESD PROTECTION CHARACTERISTICS
THERMAL CHARACTERISTICS
Order this document
by MRF18090A/D��������
SEMICONDUCTOR TECHNICAL DATA
