MRF18030A ,MRF18030AR3, MRF18030ASR3 GSM/GSM EDGE 1.8Order this documentSEMICONDUCTOR TECHNICAL DATAby MRF18030A/DThe RF MOSFET Line ..
MRF18030ALSR3 , RF Power Field Effect Transistors
MRF18030ALSR3 , RF Power Field Effect Transistors
MRF18060A ,MRF18060A, MRF18060AR3, MRF18060ALSR3, MRF18060ASR3 1.80-1.88 GHz, 60 W, 26 V Lateral N-Channel RF Power MOSFETsTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case R 0.97 °C ..
MRF18060AR3 ,RF POWER FIELD EFFECT TRANSISTORSOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF18060A/DThe RF MOSFET Line ..
MRF18060B ,MRF18060B, MRF18060BR3, MRF18060BLSR3, MRF18060BSR3 1.90-1.99 GHz, 60 W, 26 V Lateral N-Channel RF Power MOSFETsMAXIMUM RATINGSRating Symbol Value UnitDrain–Source Voltage V 65 VdcDSSGate–Source Voltage V +15, – ..
MT28F004B5 , FLASH MEMORY
MT28F008B3 , FLASH MEMORY
MT28F008B3 , FLASH MEMORY
MT28F008B3VG-9B , FLASH MEMORY
MT28F008B3VG-9T , FLASH MEMORY
MT28F008B3VG-9T , FLASH MEMORY
MRF18030A
MRF18030AR3, MRF18030ASR3 GSM/GSM EDGE 1.8
The RF MOSFET Line�� ����� ����� ������ � ����������
N–Channel Enhancement–Mode Lateral MOSFETsDesigned for GSM and EDGE base station applications with frequencies
from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. Specified for GSM 1805 – 1880 MHz. Typical GSM Performance:
Power Gain – 14 dB (Typ) @ 30 Watts
Efficiency – 50% (Typ) @ 30 Watts Internally Matched, Controlled Q, for Ease of Use High Gain, High Efficiency and High Linearity Integrated ESD Protection Designed for Maximum Gain and Insertion Phase Flatness Capable of Handling 5:1 VSWR, @ 26 Vdc, 30 W Output Power Excellent Thermal Stability Available in Tape and Reel. R3 Suffix = 250 Units per 32 mm,
13 inch Reel.
MAXIMUM RATINGS
ESD PROTECTION CHARACTERISTICS
THERMAL CHARACTERISTICS
