![](/IMAGES/ls12.gif)
MRF15060S ,RF POWER BIPOLAR TRANSISTORS**Order this documentSEMICONDUCTOR TECHNICAL DATAby MRF15060/DThe RF Sub–Micron Bipolar Line* ** * ..
MRF15090 ,RF POWER TRANSISTOR**Order this documentSEMICONDUCTOR TECHNICAL DATAby MRF15090/D* **The RF Line** ** *Designed for 2 ..
MRF1511N , RF Power Field Effect Transistor
MRF1511N , RF Power Field Effect Transistor
MRF1511N , RF Power Field Effect Transistor
MRF1511N , RF Power Field Effect Transistor
MT28F004B5 , FLASH MEMORY
MT28F008B3 , FLASH MEMORY
MT28F008B3 , FLASH MEMORY
MT28F008B3VG-9B , FLASH MEMORY
MT28F008B3VG-9T , FLASH MEMORY
MT28F008B3VG-9T , FLASH MEMORY
MRF15060S
RF POWER BIPOLAR TRANSISTORS
The RF Sub–Micron Bipolar Line -
Designed for broadband commercial and industrial applications at frequen-
cies from 1400 to 1600 MHz. The high gain and broadband performance of
these devices makes them ideal for large–signal, common–emitter class A and
class AB amplifier applications in 26 volt amplitude modulated and multi–carrier
base station equipment. Guaranteed Two–Tone Performance at 1490 MHz, 26 Volts
Output Power — 60 Watts (PEP)
Power Gain — 10 dB
Efficiency — 33% Characterized with Series Equivalent Large–Signal Impedance Parameters S–Parameter Characterization at High Bias Levels Excellent Thermal Stability All Gold Metal for Ultra Reliability Capable of Handling 3:1 VSWR @ 26 Vdc, 1490 MHz, 60 Watts (PEP)
Output Power
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Order this document
by MRF15060/D-
SEMICONDUCTOR TECHNICAL DATA