MPSH34 ,NPN Radio Frequency Transistorapplications with collector currents in the 100mA to 20mA range to 300MHz, and low frequency drift ..
MPSH34 ,NPN Radio Frequency Transistorapplications with high output levels for driving FET mixers.TO-92 Sourced from process 47. 1 See ..
MPSH81 ,PNP RF Transistorapplications involving pulsed or low duty cycle operations.3) All voltages (V) and currents (A) are ..
MPSH81 ,PNP RF Transistorapplications to 250 mHz with collector currents in the 1.0 mAto 30 mA range. Sourced from Process 7 ..
MPSL01 ,NPN General Purpose Amplifier3V , COLLECTOR−EMITTER VOLTAGE (VOLTS) h , DC CURRENT GAINCEFEI , COLLECTOR CURRENT (A)μCMPSL ..
MPSL01 ,NPN General Purpose AmplifierMPSL01Discrete POWER & SignalTechnologiesMPSL01TO-92CBENPN General Purpose AmplifierThis device is ..
MST4411CK ,High Efficiency Red 0.52 inch (13.2 mm) Three Digit Stick DisplayFEATURES
Easy to read digits.
8' 7.00 (0.28) 3 digit common anode or cathode.
5.80(0.23) "l r Lo ..
MST4911C ,0.4 INCH (10.2MM) THREE DIGIT STICK DISPLAYFEATURES
Easy to read digits.
8' 7.00 (0.28) 3 digit common anode or cathode.
5.80(0.23) "l r Lo ..
MST4941C ,0.4 INCH (10.2MM) THREE DIGIT STICK DISPLAYFEATURES
Easy to read digits.
8' 7.00 (0.28) 3 digit common anode or cathode.
5.80(0.23) "l r Lo ..
MSU2964 , 8-Bit Micro-controller
MSV-0505 , 1 AND 2 WATT DC//DC CONVERTERS SIINGLE & MULTIIPLE OUTPUTS
MT1230 , RF SILICON AND SUBSYSTEMS SOLUTIONS FOR BROADBAND COMMUNICATIONS AND AUTOMOTIVE ELECTRONICS
MPSH34
NPN Radio Frequency Transistor
MPSH34 MPSH34 NPN General Purpose Amplifier This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100mA to 20mA range to 300MHz, and low frequency drift common-base VHF oscillator applications with high output levels for driving FET mixers. TO-92 Sourced from process 47. 1 See MPSH11 for characteristics. 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Emitter Voltage 40 V CEO V Collector-Base Voltage 40 V CBO V Emitter-Base Voltage 4.0 V EBO I Collector current - Continuous 50 mA C T , T Junction and Storage Temperature -55 ~ +150 °C J stg Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units Off Characteristics V Collector-Emitter Sustaining Voltage * I = 1.0mA, I = 0 40 V (BR)CEO C B V Collector-Base Breakdown Voltage I = 100μA, I = 0 40 (BR)CBO C E V Emitter-Base Breakdown Voltage I = 10μA, I = 0 4.0 VV (BR)EBO E C I Collector Cutoff Current V = 30V, I = 0 50 nA CBO CB E On Characteristics h DC Current Gain V = 2.0V, I = 20mA 15 FE CE C V = 15V, I = 7.0mA 40 CE C V Collector-Emitter Saturation Voltage I = 7.0mA, I = 2.0mA 0.5 V CE(sat) C B V Base-Emitter On Voltage V = 15V, I = 7.0mA 0.95 V BE(on) CE C Small Signal Characteristics f Current Gain Bandwidth Product I =15mA, V = 15V, 500 MHz T C CE f = 100MHz C Collector-Base Capacitance V = 10V, I = 0, f = 1.0MHz 0.32 pF cb CB E * Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0% Thermal Characteristics T =25°C unless otherwise noted A Symbol Parameter Max. Units P Total Device Dissipation 625 mW D Derate above 25°C 5.0 mW/°C R Thermal Resistance, Junction to Case 83.3 °C/W θJC R Thermal Resistance, Junction to Ambient 200 °C/W θJA ©2003 Rev. A, September 2003
