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MPSA06 ,Leaded Small Signal Transistor General Purposeapplicationsat collector currents to 300 mA. Sourced from Process 33.Absolute Maximum Ratings* ..
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MPSA06
Bipolar Transistors
MPSA06 / MMBTA06 / PZTA06
Discrete POWER & Signal
Technologies
NPN General Purpose Amplifier
MMBTA06MPSA06 PZTA06
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value UnitsVCEO Collector-Emitter Voltage 80 V
VCBO Collector-Base Voltage 80 V
VEBO Emitter-Base Voltage 4.0 V Collector Current - Continuous 500 mA
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
MPSA06 *MMBTA06 **PZTA06 Total Device Dissipation
Derate above 25°C
1,000
mW/°C
RθJC Thermal Resistance, Junction to Case 83.3 °C/W
RθJA Thermal Resistance, Junction to Ambient 200 357 125 °C/W
This device is designed for general purpose amplifier applications
at collector currents to 300 mA. Sourced from Process 33.
BE
TO-92
SOT-23
Mark: 1G
SOT-223*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.