MPS6562 ,PNP General Purpose AmplifierMPS6562Discrete POWER & SignalTechnologiesMPS6562TO-92CBEPNP General Purpose AmplifierThis device i ..
MPS6562 ,PNP General Purpose AmplifierMPS6562Discrete POWER & SignalTechnologiesMPS6562TO-92CBEPNP General Purpose AmplifierThis device i ..
MPS6562 ,PNP General Purpose Amplifierapplications involving pulsed or low duty cycle operations.Thermal Characteristics TA = 25°C u ..
MPS6562 ,PNP General Purpose Amplifierapplications involving pulsed or low duty cycle operations.Thermal Characteristics TA = 25°C u ..
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MSQ6411C ,0.56 INCH (14.2MM) FOUR DIGIT STICK DISPLAY0.56 INCH (14.2 MM)
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MPS6562
PNP General Purpose Amplifier
MPS6562 Discrete POWER & Signal Technologies MPS6562 TO-92 C B E PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 67. See TN4033A for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 25 V CEO VCBO Collector-Base Voltage 25 V V Emitter-Base Voltage 5.0 V EBO I Collector Current - Continuous 1.0 A C Operating and Storage Junction Temperature Range -55 to +150 °C T , T J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units MPS6562 P Total Device Dissipation 625 mW D 5.0 Derate above 25°C mW/°C Rθ Thermal Resistance, Junction to Case 83.3 °C/W JC Thermal Resistance, Junction to Ambient 200 °C/W RθJA 1997
