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MPS6543FSCN/a8000avaiNPN RF Transistor
MPS6543FairchildN/a5000avaiNPN RF Transistor


MPS6543 ,NPN RF TransistorMPS6543Discrete POWER & SignalTechnologiesMPS6543TO-92CEBNPN RF TransistorThis device is designed f ..
MPS6543 ,NPN RF Transistorapplications involving pulsed or low duty cycle operations.Thermal Characteristics TA = 25°C u ..
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MPS6543
NPN RF Transistor
MPS6543 Discrete POWER & Signal Technologies MPS6543 TO-92 C E B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 100 μA to 10 mA range. Sourced from Process 47. See MPSH11 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 25 V CEO VCBO Collector-Base Voltage 35 V V Emitter-Base Voltage 3.0 V EBO I Collector Current - Continuous 50 mA C Operating and Storage Junction Temperature Range -55 to +150 °C T , T J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units MPS6543 P Total Device Dissipation 350 mW D Derate above 25°C 2.8 mW/°C Rθ Thermal Resistance, Junction to Case 125 °C/W JC Rθ Thermal Resistance, Junction to Ambient 357 °C/W JA  1997
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