MPS6521 ,Leaded Small Signal Transistor General Purposeapplications at collector to 300mA.• Sourced from process 10.TO-9211. Emitter 2. Base 3. Collecto ..
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MPS6521
NPN Low Level Amplifier
MPS6521 MPS6521 NPN General Purpose Amplifier • This device is deisgned for general purpose amplifier applications at collector to 300mA. • Sourced from process 10. TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Emitter Voltage 25 V CEO V Collector-Base Voltage 40 V CBO V Emitter-Base Voltage 4.0 V EBO I Collector Current - Continuous 100 mA C T , T Operating and Storage Junction Temperature Range - 55 ~ 150 °C J STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units Off Characteristics V Collector-Emitter Sustaining Voltage * I = 500μA, I = 0 25 V (BR)CEO C B V Emitter-Base Breakdown Voltage I = 10μA, I = 0 4 V (BR)EBO E C I Emitter Cutoff Current V = 30V, I = 0 50 nA CBO CB E On Characteristics h DC Current Gain V = 10V, I = 100μA 150 FE CE C V = 10V, I = 2.0mA 300 600 CE C V (sat) Collector-Emitter Saturation Voltage I = 50mA, I = 5.0mA 0.5 V CE C B * Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0% Thermal Characteristics T =25°C unless otherwise noted a Symbol Parameter Max. Units P Total Device Dissipation 625 mW D Derate above 25°C 5 mW/°C R Thermal Resistance, Junction to Case 83.3 °C/W θJC R Thermal Resistance, Junction to Ambient 200 °C/W θJA ©2003 Rev. A, November 2003
