MPS3703 ,PNP General Purpose Amplifierapplications involving pulsed or low duty cycle operations.Thermal Characteristics TA = 25°C u ..
MPS3703 ,PNP General Purpose AmplifierMPS3703Discrete POWER & SignalTechnologiesMPS3703TO-92CBEPNP General Purpose AmplifierThis device i ..
MPS3703 ,PNP General Purpose AmplifierMPS3703Discrete POWER & SignalTechnologiesMPS3703TO-92CBEPNP General Purpose AmplifierThis device i ..
MPS3704 ,SILICON GENERAL PURPOSE AF TRANSISTORSixii,ii.i.;ir:C,';':iCi'.ii, '. T _ Qk SCEE6Etram Sx'SSB5MW ' Jiiri'i''?i'iaiiii"ii''z'''ii'"'2'i'2 ..
MPS3704 ,SILICON GENERAL PURPOSE AF TRANSISTORSixii,ii.i.;ir:C,';':iCi'.ii, '. T _ Qk SCEE6Etram Sx'SSB5MW ' Jiiri'i''?i'iaiiii"ii''z'''ii'"'2'i'2 ..
MPS3705 ,SILICON GENERAL PURPOSE AF TRANSISTORSapplications involving pulsed or low duty cycle operations.
3. These ratings give a maximum junc ..
MSP4448G , Multistandard Sound Processor
MSP5.0AHM3/89A , Surface Mount TRANSZORB Transient Voltage Suppressors
MSP50P34N16I2D ,OTP Device 16-PDIP
MSP-EXP430G2 , Starter Kit Evaluation Kit Manual
MSQ6411C ,0.56 INCH (14.2MM) FOUR DIGIT STICK DISPLAY0.56 INCH (14.2 MM)
FOUR DIGIT STICK DISPLAY
BRIGHT RED MSQS111C, MSQG141C
GREEN MSQ6411C, M ..
MSQ6441C ,0.56 INCH (14.2MM) FOUR DIGIT STICK DISPLAY0.56 INCH (14.2 MM)
FOUR DIGIT STICK DISPLAY
BRIGHT RED MSQS111C, MSQG141C
GREEN MSQ6411C, M ..
MPS3703
PNP General Purpose Amplifier
MPS3703 Discrete POWER & Signal Technologies MPS3703 TO-92 C B E PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 63. See PN2907A for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 30 V CEO VCBO Collector-Base Voltage 50 V V Emitter-Base Voltage 5.0 V EBO I Collector Current - Continuous 800 mA C Operating and Storage Junction Temperature Range -55 to +150 °C T , T J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units MPS3703 P Total Device Dissipation 625 mW D 5.0 Derate above 25°C mW/°C Rθ Thermal Resistance, Junction to Case 83.3 °C/W JC Thermal Resistance, Junction to Ambient 200 °C/W RθJA 1997
