MPIC2117P ,SINGLE CHANNEL DRIVERMaximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage ..
MPIC2130P ,3-PHASE BRIDGE DRIVERMaximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage ..
MPIC2131P ,3 HIGH SIDE & 3 LOW SIDE DRIVERMaximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage ..
MPIC2151P ,Half-bridge driverMaximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage ..
MPL73-3R3 , Power Inductor
MPL73-3R3 , Power Inductor
MSP430F2131IRGET ,16-Bit Ultra-Low-Power Microcontroller, 8kB Flash, 256B RAM, Comparator 24-VQFN -40 to 85 SLAS439F–SEPTEMBER 2004–REVISED AUGUST 2011Device PinoutDW, PW, or DGV PACKAGE(TOP VIEW)TEST 1 20 ..
MSP430F2131TDGVR ,16-Bit Ultra-Low-Power Microcontroller, 8kB Flash, 256B RAM, Comparator 20-TVSOP -40 to 105 SLAS439F–SEPTEMBER 2004–REVISED AUGUST 2011MIXED SIGNAL MICROCONTROLLER1
MSP430F2131TDWR ,16-Bit Ultra-Low-Power Microcontroller, 8kB Flash, 256B RAM, Comparator 20-SOIC -40 to 105Functional
MSP430F2131TPW ,16-Bit Ultra-Low-Power Microcontroller, 8kB Flash, 256B RAM, Comparator 20-TSSOP -40 to 105FEATURES• Serial Onboard Programming, No ExternalProgramming Voltage Needed, Programmable• Low Supp ..
MSP430F2131TRGER ,16-Bit Ultra-Low-Power Microcontroller, 8kB Flash, 256B RAM, Comparator 24-VQFN -40 to 105Table 1. Available OptionsPACKAGED DEVICESPLASTIC PLASTIC PLASTIC PLASTICTA20-PIN SOWB 20-PIN TSSOP ..
MSP430F2131TRGET ,16-Bit Ultra-Low-Power Microcontroller, 8kB Flash, 256B RAM, Comparator 24-VQFN -40 to 105Table 1. Available OptionsPACKAGED DEVICESPLASTIC PLASTIC PLASTIC PLASTICTA20-PIN SOWB 20-PIN TSSOP ..
MPIC2117P
SINGLE CHANNEL DRIVER
Power Products Division- -
The MPIC2117 is a high voltage, high speed, power MOSFET and IGBT driver.
Proprietary HVIC and latch immune CMOS technologies enable ruggedized mono-
lithic construction. The logic input is compatible with standard CMOS outputs. The
output drivers feature a high pulse current buffer stage designed for minimum driv-
er cross–conduction. The floating channel can be used to drive an N–channel pow-
er MOSFET or IGBT in the high side or low side configuration which operates from
10 to 600 volts. Floating Channel Designed for Bootstrap Operation Fully Operational to +600 V Tolerant to Negative Transient Voltage dV/dt Immune Gate Drive Supply Range from 10 to 20 V Undervoltage Lockout CMOS Schmitt–triggered Input with Pull–down Output In Phase with Input
PRODUCT SUMMARY
VOFFSET 600 V MAX
IO+/– 200 mA/420 mA
VOUT 10 – 20 V
ton/off (typical) 125 & 105 nsThis document contains information on a new product. Specifications and information herein are subject
ORDERING INFORMATION
