MPF102 ,N-Channel RF Amplifierapplications involving pulsed or low duty cycle operations.NOTES :* This ratings are limiting value ..
MPF102 ,N-Channel RF Amplifier MPF102GTO-92SD Sourced from Process 50. ..
MPF102 ,N-Channel RF Amplifier
MPF4393 ,JFETs SwitchingELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
MPF4393 ,JFETs SwitchingELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)ACharacteristic Symbol Min ..
MPF6659 ,TMOS SWITCHING FET TRANSISTORSMAXIMUM RATINGS2N6659 MPF6659thru thm2N6661 MPF66612N6659.60,61CASE TSAM, STYLE 6 'TO-39 (TOTZOSAD) ..
MSP430F2111IDGVR ,16-bit Ultra-Low-Power Microcontroller, 2kB Flash, 128B RAM, Comparator 20-TVSOP -40 to 85 SLAS439F–SEPTEMBER 2004–REVISED AUGUST 2011MIXED SIGNAL MICROCONTROLLER1
MSP430F2111IDW ,MIXED SIGNAL MICROCONTROLLERTable 1. Available OptionsPACKAGED DEVICESPLASTIC PLASTIC PLASTIC PLASTICTA20-PIN SOWB 20-PIN TSSOP ..
MSP430F2111IDWR ,16-bit Ultra-Low-Power Microcontroller, 2kB Flash, 128B RAM, Comparator 20-SOIC -40 to 85Table 1. Available OptionsPACKAGED DEVICESPLASTIC PLASTIC PLASTIC PLASTICTA20-PIN SOWB 20-PIN TSSOP ..
MSP430F2111IDWR ,16-bit Ultra-Low-Power Microcontroller, 2kB Flash, 128B RAM, Comparator 20-SOIC -40 to 85Functional
MSP430F2111IPW ,MIXED SIGNAL MICROCONTROLLERfeatures apowerful 16-bit RISC CPU, 16-bit registers, and constant generators that contribute to ma ..
MSP430F2111IPWR ,16-bit Ultra-Low-Power Microcontroller, 2kB Flash, 128B RAM, Comparator 20-TSSOP -40 to 85MSP430F21x1
MPF102
N-Channel RF Amplifier
MPF102 G TO-92 S D Sourced from Process 50. ValueUnits V25V VV I10mA Operating and Storage Junction Temperature RangeTJ 1) These rating are based on a maximum junction temperature of 150 degrees C. Units PD350 2.8 degrees C/WRqJC125 degrees C/WRq357 * Device mounted on FR-4 PCB 1.5” X 1.6” X 0.06” ã 1999 JA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Derate above 25 degrees C mW/degrees C Total Device Dissipation mW MaxCharacteristicSymbol TA = 25 degrees C unless otherwise noted.Thermal Characteristics 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. NOTES : * This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. degree C-55 to + 155stg,T Forward Gate CurrentGF -25Gate-Source VoltageGS Drain-Gate VoltageDG ParameterSymbol TA=25 degree C unless otherwise noted Absolute Maximum Ratings * Applications such as low ON resistance analog switching. This device is designed for electronic switching N-Channel RF Amplifier
