MP6403 ,HIGH POWER SWITCHING APPLICATION 3 PHASE MOTOR AND BIPOLAR DRIVE OF PULSE MOTORM P6403TOSHIBA POWER MOS FET MODULE SILICON N & P CHANNEL MOS TYPE (LZ-zr-MOSIV 6 IN 1)MP6403HIGH P ..
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MP6403
HIGH POWER SWITCHING APPLICATION 3 PHASE MOTOR AND BIPOLAR DRIVE OF PULSE MOTOR
TOSHIBA MP6403
TOSHIBA POWER MOS FET MODULE SILICON N & P CHANNEL MOS TYPE (ty-ar-MOST 6 IN 1)
MP6403
HIGH POWER SWITCHING APPLICATION. INDUSTRIAL APPLICATIONS
3-PHASE MOTOR DRIVE AND BIPOLAR DRIVE OF PULSE MOTOR. Unit in mm
o 4-Volt Gate Drive Available M.5 t0.2
0 Small Package by Full Molding (SIP 12 Pin) - gf
0 High Drain Power Dissipation (6 Devices Operation) 2 iiij
: PT=36W(Ta=25°C) __g
0 Low Drain-Source ON Resistance l I . __3_
1 RDS (ON)=90mQ (Typ.) (N-ch) 2S4 J_LM
170mn(Typ.) (P-ch) 1310.15 ' g
It Low Leakage Current: IGSS= i 10 PA (Max.) (VGS = i 16V)
IDSS = 100PA (Max.) (VDS = 60V)
0 Enhancement-Mode : Vth = 0.8--2.0V (ID = 1mA)
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT 2, 4, 6, 8, 9, 11 GATE
N ch P ch 3, 7, 10 DRAIN
Drain-Source Voltage VDSS 60 -60 V l, 5, 12 SOURCE
Gate-Source Voltage VGSS i20 i20 V JEDEC -
Drain Current ID 5 -5 A EIAJ -
Peak Drain Current IDP 20 -20 A TOSHIBA 2-3201K
. . . i h : .
(ctt,evtiocreP/gercil,i,stpation PD 2.2 w Weight 3.9g
Collector Power Dissipation Ta=25°C PT 4.4 W
(6 Devices Operation) Tc-- 25°C 36
Channel Temperature Teh 150 T
Storage Temperature Range Tstg -55--150 "C
ARRAY CONFIGURATION
:3: t} C}
r-o3 '-o7 r-o10
2 L: 8 lr- 9 1:}
_ I-, _
1 2001-05-24
TOSHIBA MP6403
THERMAL CHARACTERISTICS
CHARACTERISTIC SYMBOL MAX. UNIT
Thermal Resistance of Channel to Ambient
- 2 .4 ° /W
(6 Devices Operation, Ta=25°C) ERth(ch a) 8 C
Thermal Resistance of Channel to Case
- .4 ©
(6 Devices Operation, Tc=25°C) 2Rth(ch e) 3 7 C/W
Maximum Lead Temperature for Soldering Purposes TL 260 "C
(3.2mm from Case for 10s)
This Transistor is an Electrostatic Sensitive Device.
Please Handle with Caution.
TOSHIBA MP6403
ELECTRICAL CHARACTERISTICS(Ta=25°C) (Nch MOS FET)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current IGSS VGS = i 16V, VDS = 0 - - i 10 PA
Drain Cut-off Current IDSS VDS = 60V, VGSZO - - 100 PA
Drain-Source Breakdown
Voltage V (BR) DSS ID - lOmA, VGS - 0 60 - -
Gate Threshold Voltage Vth VDS = 10V, ID = 1mA 0.8 - 2.0
Forward Transfer Admittance Istl VDS = 10V, ID = 2.5A 3.0 6.0 - S
R I = 2.5A, V =4V - 135 200
Drain-Source ON Resistance DS (ON) D GS 1110
RDS (ON) ID = 2.5A, VGS = 10V - 90 125
Input Capacitance Ciss - 500 -
Reverse Transfer Capacitance Crss VDS = 10V, VGS = o, f = 1MHz - 90 - pF
Output Capacitance Coss - 290 -
Rise Time tr 'f-r IP_=2'5AV - 20 -
T Ti O VIN g OUT 60
Switching urn-on 1me ton H g H - -
Time 10ps m ns
Fall Time tf . - 80 -
VDD=.30V
. VIN : tr, tf< 5ns
Turn-off Time toff Du.S 1% (ZOUT= 509) - 300 -
Total Gate Charge
(Gate-Source Plus Gate-Drain) Qg ID=5A, VGS=10V - 20 - C
Gate-Source Charge Qgs VDD=48V - 14 - n
Gate-Drain ("Miller") Charge di - 6 -
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS(Ta =25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Drain Reverse Current IDR - - - 5 A
Peak Drain Reverse Current IDRP - - - 20 A
Diode Forward Voltage VDSF IDR=5A, VGS=0 - - -1.5 V
Reverse Recovery Time trr IDR=5A, VGSZO - 140 - ns
Reverse Recovery Charge er dIDR/ dt= -50A/ #5 - 0.4 - pd?
3 2001-05-24
TOSHIBA MP6403
ELECTRICAL CHARACTERISTICS(Ta =25°C) (Pch MOS FET)
CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX. UNIT
Gate Leakage Current IGSS VGS= i 16V, VDs=O - - i 10 PA
Drain Cut-off Current IDSS V133: -60V, VGS--0 - - -100 PA
Drain-Source Breakdown
Voltage V (BR) DSS ID - - 10mA, VGS=0 - 60 - -
Gate Threshold Voltage Vth VDS = - 10V, ID = - lmA -0.8 - -2.0 V
Forward Transfer Admittance Istl VDS= - 10V, ID-- -2.5A 1.0 2.0 - S
R I = -2.5A, V = -4V - 250 400
Drain-Source ON Resistance DS (ON) D GS 1110
RDS (ON) ID = -2.5A, VGS = - 10V - 170 245
Input Capacitance Ciss - 500 -
Reverse Transfer Capacitance Crss V133: - 10V, VGS=0, f = 1MHz - 90 - pF
Output Capacitance Coss - 290 -
Rise Time tr ID: -2. 5A - 120 -
-10V ilr-?re1-N; GVOUT
Switching Turn-on Time ton 10 i-l:i,'jit,'c-i, - 130 - ns
Time Fall Time tf 3% - 80 -
VDD'. -30V
. VIN : tr, tf<5ns
Turn-off Time toff Du.S 1% (ZOUT= 509) - 200 -
Total Gate Charge Q - 22 -
(Gate-Source Plus Gate-Drain) g ID-- -5A, VGS-- -10V C
Gate-Source Charge Qgs VDD = -48V - 14 - n
Gate-Drain ("Miller") Charge di - 8 -
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS(Ta =25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Drain Reverse Current IDR - - - -5 A
Peak Drain Reverse Current IDRP - - - -20 A
Diode Forward Voltage VDSF IDR-- -5A, VGS=0 - - 1.5 V
Reverse Recovery Time trr IDR-- -5A, VGSZO - 120 - ns
Reverse Recovery Charge er dIDR/ dt= -50A/ #5 - 0.24 - pd?
TOSHIBA MP6403
Neh FET
ID - VDS ID - VDS
COMMON COMMON
SOURCE SOURCE
Tc=25°C Tc=25°C
E _"ii:
ttt ttt
ii a 2.5
VGs=2V VGS--2V
0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 IO 12
DRAIN-SOURCE VOLTAGE VDs (V) DRAIN-SOURCE VOLTAGE VDs (V)
ID - VGS lstl - ID
COMMON COMMON
‘SIOURCIISV 8 SOURCE
a DS-- 3. VDS= 10V Tc-- -55''C
f? E1 100
: Sur-en,
D 'disL'i'
T 100°C g
c-- -55 h
0 1 2 3 4 5 6 '0.1 0.3 1 3 10 20
GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A)
0.3 RDS(ON) - ID RDS(ON) - Te
0.20 ID-- 5A
E t; 0.16
E 0.1 ac};
Flat M
mo} a A 0.12
“v o g I =5 2.5 1.2A
5(2) 0.05 5%; D , ., .
8iii g/s 0.08 10
mg 0.03 (fl
T COMMON 2 0.04
E SOURCE E
g Tc=25°C
D 0.01 0
0.3 1 3 10 20 -80 -40 0 40 80 120 160 200
DRAIN CURRENT ID (A) CASE TEMPERATURE Te (°C)
5 2001-05-24
TOSHIBA
Nch FET
IDR (A)
DRAIN REVERSE CURRENT
DRIN—SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
ID - VDS
COMMON
SOURCE
Tc = 25''C
-0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 -3.2 -3.6
DRAIN-SOURCE VOLTAGE VDS (V)
VDS - VGS
COMMON
SOURCE
Te = 25''C
4 8 12 16 20
GATE-SOURCE VOLTAGE VGS (V)
DYNAMIC INPUT / OUTPUT
CHARACTERISTICS
VDD = 1 2V COMMON
SOURCE
ID = 5A
Tc = 25°C
10 20 30 40 50
TOTAL GATE CHARGE Qg (nC)
GATE-SOURCE VOLTAGE VGS (V)
CAPACITANCE C (pl?)
GATE THRESHOLD VOLTAGE Vth (V)
MP6403
CAPACITANCE - VDS
COMMON
SOURCE
VGS = 0V
f= IMHz
Tc = 25°C
0.3 1 3 10 30 100
DRAIN-SOURCE VOLTAGE VDS (V)
Vth - Te
COMMON
SOURCE
VDS: 10V
ID-- lmA
-40 0 40 80 120 160
CASE TEMPERATURE Te (°C)
TOSHIBA MP6403
Peh FET
ID - VDS
COMMON COMMON
SOURCE SOURCE
Te = 25°C Tc= 25°C
g _"ii:
ttt ttt
ii - 2.5 ii
VGS= -2V VGS= -2ir
0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 0 -2 -4 -6 -8 -10 -12
DRAIN-SOURCE VOLTAGE VDs (V) DRAIN-SOURCE VOLTAGE VDs (V)
ID - VGS lstl - ID
COMMON COMMON - 5
SOURCE 8 SOURCE Tc - - 55 C
Tc---55t VDs=-10V a VDs---10V
E pta"
n: “4..
td (2 a
0 -2 -4 -6 -8 -10 -12 -0.1 -0.3 -1 -3 -10
GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A)
RDS(0N) - ID RDS(ON) - Te
COMMON
SOURCE
Tc = 25''C
DRAIN-SOURCE 0N RESISTANCE
RDS<0N> <0)
DRAlN-SOURCE 0N RESISTANCE
RDS<0N> (0)
0.05 10 -2.5
0.03 - 1.2
-0.1 -0.3 -1 -3 - 10 -80 -40 0 40 80 120 160
DRAIN CURRENT ID (A) CASE TEMPERATURE Te (°C)
7 2001-05-24
TOSHIBA MP6403
Pch FET
IDR - VDS CAPACITANCE - VDS
30 3000
A COMMON
s SOURCE
pt Tc=25°C
a 10 A 1000
5-1 5 s'.2p 500
'ti',: 3 300
:2 t,2
g 1 E; 100
{a 3; COMMON
> a 50
E 0.5 .1 SOURCE
2 0.3 O 30 VGs=ov
a' v =0,1v f=lMHz
2% GS Tc=25°C
0.1 10
0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 -0.1 -0.3 -1 -3 -10 -30 -100
DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V)
VDS - VGS Vth - Te
COMMON COMMON
SOURCE SOURCE
Te = 25''C VDS: - 10V
-2.0 In---'
DRIN-SOURCE VOLTAGE VDS (V)
GATE THRESHOLD VOLTAGE Vth (V)
0 -4 -8 -12 -16 -20 -24 -80 -40 0 40 80 120 160
GATE-SOURCE VOLTAGE VGS (V) CASE TEMPERATURE Te (°C)
DYNAMIC INPUT / OUTPUT
CHARACTERISTICS
VDD = - 12V COMMON
SOURCE
ID = - 5A
Te = 25''C
DRAIN-SOURCE VOLTAGE VDS (V)
GATE-SOURCE VOLTAGE VGS (V)
0 10 20 30 40 50
TOTAL GATE CHARGE Qg (nC)
8 2001-05-24
TOSHIBA MP6403
rth - tw
M CURVES SHOULD BE APPLIED IN s..---''""'
g 100 THERMAL LIMITED AREA. -t"
< (SINGLE NONREPETITIVE PULSE)
t BELOW FIGURE SHOW THERMAL CC?, -
a RESISTANCE PER 1 UNIT VERSUS r, . N _ a
g PULSE WIDTH. y \3
'd: t "we' V2)
iye 10 2" C)
F, ti _
g - - NO HEAT SINK AND ATTACHED
E w."' ON A CIRCUIT BOARD -
m /’ C) 1 DEVICE OPERATION
E 1 - (2) 2 DEVICES OPERATION
n: C2 3 DEVICES OPERATION
F (rt) 4 DEVICES OPERATION CIRCUIT BOARD
0.001 0.01 0.1 1 10 100 1000
PULSE WIDTH tw (s)
SAFE OPERATING AREA (Nch, Pch) PT - Ta
30 I I ( I III I I I I ll 8
IDP MAX.(PULSED) IO/s >:< g C) 1 DEVICE OPERATION
, V (Z) 2 DEVICES OPERATION
l , N E. (3) 3 DEVICES OPERATION
loops y.f cu 6 co 4 DEVICES OPERATION
10 \ Z
"N. , 2 ATTACHED ON A
- -ID MAX. N, NT X E ‘(0 CIRCUIT BOARD
s , N N E 'sc
\ W?" yd. if] 4 ,
I? 3 N a co y::::::, _ - - -
M - ' _ v I
- 'r, N, tN © \ , LIIJ U
5 100ms ).K N "N, B \\\ CIRCUIT BOARD
ttd O - \ N2
n: N cu 2 co ' 2N
P, N, N 'ai \\\
9 1 N F "s
g 's, 0
c 0 40 80 120 160 200
.y.f SINGLE NONREPETITIVE
0 3 PULSE Tc=25°C AMBIENT TEMPERATURE Ta (°C)
CURVES MUST BE
DERATED LINEARLY WITH ATj - PT
INCREASE IN VDSS MAX. 160
TEMPERATURE. l l l I m
0.1 'd!
3 10 30 100 300 M A -
td co Cd) CY) (l)
C2 I , ,
DRAIN-SOURCE VOLTAGE VDs (V) 2 120 f /
a / //
g V 80 J X
'l? g: // CIRCUIT BOARD
a (Y ATTACHED ON A
ts / ot(/ CIRCUIT BOARD
E / , C1) 1 DEVICE OPERATION
E , (2) 2 DEVICES OPERATION
g cp, 3 DEVICES OPERATION
0 GD 4 DEVICES OPERATION
0 2 4 6 8 10
TOTAL POWER DISSIPATION PT (W)
9 2001-05-24
TOSHIBA MP6403
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
10 2001-05-24
www.ic-phoenix.com
.
