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MP4506TOSHIBAN/a200avaiPower Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.


MP4506 ,Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.Applications. Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching.  Package ..
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MP4508 ,Power Transistor Module Silicon PNP Triple Diffused Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.Applications. Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching.  Package w ..
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MP4514 ,Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.Thermal Characteristics Characteristics Symbol MaxUnit Thermal resistance of channel to ambient 25 ..
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MP4506
Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
MP4506
TOSHIBA Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1)
MP4506

High Power Switching Applications.
Hammer Drive, Pulse Motor Drive and Inductive Load Switching. Package with heat sink isolated to lead (SIP 12 pin) High collector power dissipation (4 devices operation)
: PT = 5 W (Ta = 25°C) High collector current: IC (DC) = 5 A (max) High DC current gain: hFE = 1000 (min) (VCE = 3 V, IC = 3 A)
Maximum Ratings (Ta = 25°C)

Array Configuration

Industrial Applications
Unit: mm
Weight: 6.0 g (typ.) R1 R2 11
R1 ≈ 5 kΩ R2 ≈ 200 Ω
8 12
67
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