MP4410 ,Power MOS FET Module Silicon N Channel MOS Type (L2-pi-MOSV 4 in 1) High Power, High Speed Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.Thermal Characteristics Characteristics Symbol MaxUnit Thermal resistance of channel to ambient 28. ..
MP4411 ,Power MOS FET Module Silicon N Channel MOS Type (L2-pi-MOSV 4 in 1) High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid DriverMP4411 2 TOSHIBA Power MOS FET Module Silicon N Channel MOS Type (L -π-MOSV 4 in 1) MP4411 Indust ..
MP4411. ,Power MOS FET Module Silicon N Channel MOS Type (L2-pi-MOSV 4 in 1) High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid DriverThermal Characteristics Characteristics Symbol MaxUnit Thermal resistance of channel to ambient 28. ..
MP4501 ,Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.Thermal Characteristics Characteristics Symbol MaxUnit Thermal resistance of junction to ambient 25 ..
MP4502 ,Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.Thermal Characteristics Characteristics Symbol MaxUnit Thermal resistance of channel to ambient 25 ..
MP4503 ,Power Transistor Module Silicon NPN&PNP Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.Thermal Characteristics Characteristics Symbol MaxUnit Thermal resistance of junction to ambient 25 ..
MSM6100 , MSM6100
MSM6100 , MSM6100
MSM6100 , MSM6100
MSM-6100 , MSM6100
MSM6250 , CHIPSET SOLUTION
MSM-6250 , CHIPSET SOLUTION
MP4410
Power MOS FET Module Silicon N Channel MOS Type (L2-pi-MOSV 4 in 1) High Power, High Speed Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
MP4410 TOSHIBA Power MOS FET Module Silicon N Channel MOS Type (L2 -π-MOSV 4 in 1)
MP4410 High Power, High Speed Switching Applications.
Hammer Drive, Pulse Motor Drive and Inductive Load Switching. 4 V gate drive available Small package by full molding (SIP 12 pin) High drain power dissipation (4 devices operation)
: PT = 28 W (Tc = 25°C) Low drain-source ON resistance: RDS (ON) = 0.12 Ω (typ.) Low leakage current: IGSS = ±10 µA (max) (VGS = ±16 V) IDSS = 100 µA (max) (VDS = 60 V) Enhancement-mode: Vth = 0.8 to 2.0 V (ID = 1 mA)
Maximum Ratings (Ta = 25°C) 4.4
Array Configuration Industrial Applications
Unit: mm
Weight: 3.9 g (typ.) 2 3 9 10
