MP4403 ,TOSHIBA POWER MOS FET MODULE SILICON N CHANNEL MOS TYPEAPPLICATIONSHAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD Unit 1n mmSWITCHING. l l2IR+n ,4-Vol ..
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MP4411 ,Power MOS FET Module Silicon N Channel MOS Type (L2-pi-MOSV 4 in 1) High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid DriverMP4411 2 TOSHIBA Power MOS FET Module Silicon N Channel MOS Type (L -π-MOSV 4 in 1) MP4411 Indust ..
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MSM-6250 , CHIPSET SOLUTION
MP4403
TOSHIBA POWER MOS FET MODULE SILICON N CHANNEL MOS TYPE
TOSHIBA MP4403
TOSHIBA POWER MOS FET MODULE SILICON N CHANNEL MOS TYPE (LZ-n-MOSIV 4 IN 1)
MPAMLIB
HIGH POWER, HIGH SPEED SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS
HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD Unit 1n mm
SWITCHING.
0 4-Volt Gate Drive Available 2 _'iii
0 Small Package by Full Molding (SIP 12 Pin) ' . 2iiit-iti_,'i
0 High Drain Power Dissipation (4 Devices Operation) - S'
o 0.85:0.15
'. PT=28W(Tc=25 C) mm 'd.] g
It Low Drain-Source ON Resistance : RDS(0N)=0.200 (Typ.) t,l _ vt,l
0 Low Leakage Current .' IGSS= -k10/Lt(Max.) (VGS= i'IGV) KN ------r- - t
1nss=100pA(Max.) (VDS=120V) 1 12
o Enhancement-Mode : Vth=0.8~2.0V (ID=1mA)
MOS FET DIODE
MAXIMUM RATINGS(Ta =25°C) 1,5.8, 12 GATE 214.91“ ANODE
2, 4, 9, 11 DRAIN 3, 10 CATHODE
CHARACTERISTIC SYMBOL RATING UNIT 6, 7 SOURCE
JEDEC -
Drain-Source Voltage VDSS 120 V EIAJ
Gate-Source Voltage VGSS uF20 V -
. TOSHIBA 2-3201D
Drain Current ID 5 A W . h 3 9
Peak Drain Current IDP 10 A e1g t . . g
Drain Power Dissipation
(1 Device Operation) PD 2.2 W
Drain Power Dissipation Ta=25°C 4.4
. . PT W
(4 Devices Operation) Tc= 25°C 28
Channel Temperature Teh 150 T
Storage Temperature Range Tstg -55-150 T
ARRAY CONFIGURATION
2 3 4 9 10 11
O I O O T O
_ _ _ _
_ 5 H- 8 _ 12 _
6 C o 7
1 2001-05-24
TOSHIBA MP4403
THERMAL CHARACTERISTICS
CHARACTERISTIC SYMBOL MAX. UNIT
Thermal Resistance of Channel to Ambient 0
(4 Devices Operation, Ta=25°C) ERth(eh-a) 28.4 C/W
Thermal Resistance of Channel to Case 0
(4 Devices Operation, Tc=25°C) ERth(ch-e) 4.46 C/W
Maximum Lead Temperature for Soldering Purposes T 260 "C
(3.2mm from Case for 10s) L
This Transistor is an Electrostatic Sensitive Device. Please Handle with Caution.
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current IGSS Vgs= i16V, VDs=O - - 1'10 PA
Drain Cut-off Current IDSS VDs=120V, VGS=0 - - 100 PA
Drain-Source Breakdown
Voltage V(BR)DSS IIo=10mA, VGS=0 120 - -
Gate Threshold Voltage Vth Vps=10V, ID=1mA 0.8 - 2.0 V
Forward Transfer Admittance " VDS= 10V, ID=2.5A 2.0 4.0 - S
R =2.5A, V =4V - 0.28 0.44
Drain-Source ON Resistance DS (ON) D GS n
RDS (ON) ID=2.5A, VGS= 10V - 0.20 0.3
Input Capacitance Ciss VD3210V, VGS--0, f = 1MHz - 540 - pF
Reverse Transfer Capacitance Crss Vps=10V, VGS=0, f = 1MHz - 47 - pF
Output Capacitance Coss VDs=10V, VGS=0, f = 1MHz - 180 - pF
. . ID=2.5A
Rise Time tr - - 15 -
"yn VIN ce VOUT
Switching Turn-on Time ton 0 H g g - 50 -
Time . 10ps m ns
Fall Time tf VDD: 60V - 40 -
. VIN : tr, tf<5ns,
Turn-off Time toff Du.S 1% (Z OUT= 50 fl) - 280 -
Total Gate Charge Q 27
(Gate-Source Plus Gate-Drain) g I 5A V 10V V 96V - - C
Gate-Source Charge Qgs D= , GS-- ' DD= - 18 - n
Gate-Drain ("Mi1ler") Charge di - 9 -
TOSHIBA MP4403
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS(Ta =25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Drain Reverse Current IDR - - - 5 A
Peak Drain Reverse Current IDRP - - - 10 A
Diode Forward Voltage VDSF IDR = 5A, VGS = 0 - - 1.0 - 1.5 V
Reverse Recovery Time trr DR=5A, VGS=0, - 180 - ns
Reverse Recovery Charge er dIDR/ dt= -50A/ #5 - 0.54 - pd?
FLYBACK-DIODE RATINGS AND CHARACTERISTICS (Ta =25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Maximum Forward Current IFM - - - 5 A
Reverse Current IR VR = 120V - - 0.4 pdk
Reverse Voltage VR IR = 100 PA 120 - - V
Forward Voltage VF IF = 2A - - 2.3 V
3 2001-05-24
TOSHIBA
ID (A)
DRAIN CURRENT
ID (A)
DRAIN CURRENT
DRIN-SOURCE VOLTAGE VDS (V)
COMMON
SOURCE
Tc = 25°C
V =2.2V
0.4 0.8 1.2 1.6 2.0
DRAIN-SOURCE VOLTAGE VDS (V)
ID - VGS
COMMON SOURCE
VDS = 10v
1 2 3 4 5 6
GATE-SOURCE VOLTAGE VGS (V)
VDS - VGS
COMMON SOURCE
Te = 25°C
4 8 12 16 20
GATE-SOURCE VOLTAGE VGS (V)
In (A)
DRAIN- UR E E I TA E
SO RDCS(OOI\]J: R(QS)S NC DRAIN CURRENT
DRAIN—SOURCE 0N RESISTANCE
RDS<0N> (9)
M P4403
ID - VDS
COMMON SOURCE
Tc = 25°C
0 4 8 12 16 20
DRAIN-SOURCE VOLTAGE VDS (V)
RDS (ON) - ID
COMMON SOURCE
Te = 25°C
'0.1 0.3 0.5 1 3 5 10 20
DRAIN CURRENT ID (A)
RDS (ON) - Te
0.8 COMMON SOURCE
- 80 - 40 0 40 80 120 160
CASE TEMPERATURE Te (°C)
TOSHIBA
IYEI (S) GATE THRESHOLD VOLTAGE Vth (V)
FORWARD TRANSFER ADMITTANCE
DRAIN REVERSE CURRENT [DR (A)
Vth - Te
COMMON
SOURCE
4 VDS = 1 0V
ID = 1 111A
-80 -40 0 40 80 120 160
CASE TEMPERATURE Te (°C)
lyfsl - ID
COMMON SOURCE
VDS = 10V
Tc = -55''C
0.1 0.3 0.5 1 3 5 10
DRAIN CURRENT ID (A)
IDR - VDS
COMMON SOURCE
1 Vgs=0, -IV
0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 -3.0
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
CAPACITANCE C ([11?)
M P4403
DYNAMIC INPUT / OUTPUT
CHARACTERISTICS
COMMON SOURCE
ID = 5A
Tc = 25°C
10 20 30 40
TOTAL GATE CHARGE Qg (nC)
CAPACITANCE - VDS
COMMON
SOURCE
f=1MHz
Te = 25°C
0.3 1 3 10 30 100
DRAIN-SOURCE VOLTAGE VDS (V)
GATESOURCE VOLTAGE VGS (V)
TOSHIBA
M P4403
DRAIN CURRENT ID (A)
TRANSIENT THERMAL RESISTANCE
rth (°C/W)
100 (SINGLE NONREPETITIVE PULSE)
rth - tw
CURVES SHOULD BE APPLIED IN
THERMAL LIMITED AREA
BELOW FIGURE SHOW THERMAL
RESISTANCE PER 1 UNIT VERSUS
PULSE WIDTH.
ON A CIRCUIT BOARD -
C) 1 DEVICE OPERATION
(2) 2 DEVICES OPERATION
1 co 3 DEVICES OPERATION
co 4 DEVICES OPERATION
" - NO HEAT SINK AND ATTACHED
CIRCUIT BOARD
0.001 0.01 0.1 1 10
PULSE WIDTH w (s)
SAFE OPERATING AREA
100 1000
co 3 DEVICES OPERATION
(4) 4 DEVICES OPERATION
E co 1 DEVICE OPERATION
- C2) 2 DEVICES OPERATION
Inp MAX.(PULSED) E co 3 DEVICES OPERATION
i i i i i "N. \\ 1_oo,zs>.< I E 6 Ci) 4 DEVICES OPERATION
Cir, MAX. "i xlmsx F - ATTACHED ON A
' _ I < co CIRCUIT BOARD
N, "ss "N m
'ssc ‘\10ms>< "N H 'N.
", E2 l 'ss,
k a co Ite, TzF'Fzzo
100ms.)k. N, E - _ sr, II I
C)? 's,
'Ht "s, 3 sch?) CIRCUIT BOARD
"s, "ws, O _ _ ts
_ C) 's Ft
' A ss?r3s
0 40 80 120 160 200
.2(. SINGLE NONREPETITIVE AMBIENT TEMPERATURE Ta CC)
PULSE Tc=25°C
CURVES MUST BE DERATED VDSS AT; - P
LINEARLY WITH INCREASE MAX. 160 J T
IN TEMPERATURE. a
5 10 30 50 100 200 g f
8 T 2) s (2
DRAIN-SOURCE VOLTAGE VDS (V) a 120 / I/l
{=1 / / ATTACHED ON A
g I / CIRCUIT BOARD
- i,3 / /7
E .-. 80
m S / //
a / CIRCUIT BOARD
f, 40 (D 1 DEVICE OPERATION
5 / C)) 2 DEVICES OPERATION
2 4 6 8 10
TOTAL POWER DISSIPATION PT (W)
TOSHIBA MP4403
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
7 2001-05-24
www.ic-phoenix.com
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