MP4305 ,Power Transistor Module Silicon PNP Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.Thermal Characteristics Characteristics Symbol MaxUnit Thermal resistance of junction to ambient 28 ..
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MP4410 ,Power MOS FET Module Silicon N Channel MOS Type (L2-pi-MOSV 4 in 1) High Power, High Speed Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.Thermal Characteristics Characteristics Symbol MaxUnit Thermal resistance of channel to ambient 28. ..
MP4411 ,Power MOS FET Module Silicon N Channel MOS Type (L2-pi-MOSV 4 in 1) High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid DriverMP4411 2 TOSHIBA Power MOS FET Module Silicon N Channel MOS Type (L -π-MOSV 4 in 1) MP4411 Indust ..
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MSM6100 , MSM6100
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MSM6100 , MSM6100
MSM-6100 , MSM6100
MSM6250 , CHIPSET SOLUTION
MSM-6250 , CHIPSET SOLUTION
MP4305
Power Transistor Module Silicon PNP Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
MP4305 TOSHIBA Power Transistor Module Silicon PNP Epitaxial Type (Darlington power transistor 4 in 1)
MP4305 High Power Switching Applications.
Hammer Drive, Pulse Motor Drive and Inductive Load Switching. Small package by full molding (SIP 12 pin) High collector power dissipation (4 devices operation)
: PT = 4.4 W (Ta = 25°C) High collector current: IC (DC) = −5 A (max) High DC current gain: hFE = 2000 (min) (VCE = −5 V, IC = −3 A) Diode included for absorbing fly-back voltage.
Maximum Ratings (Ta = 25°C) Tstg
Array Configuration Industrial Applications
Unit: mm
Weight: 3.9 g (typ.)
2 4 9
R1 ≈ 4.5 kΩ R2 ≈ 300 Ω 8
R1 R2 7
3 10
