MP4212 ,Power MOS FET Module Silicon N&P Channel MOS Type (L2-pi-MOSV 4 in 1) High Power High Speed Switching Applications H-Switch DriverApplications Unit: mmH-Switch Driver 4 V gate drive Small package by full molding (SIP 10 ..
MP4212 ,Power MOS FET Module Silicon N&P Channel MOS Type (L2-pi-MOSV 4 in 1) High Power High Speed Switching Applications H-Switch DriverElectrical Characteristics (Ta = 25°C) (Nch MOS FET) Characteristics Symbol Test Condition Min Typ. ..
MP4301 ,Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.Thermal Characteristics Characteristics Symbol MaxUnit Thermal resistance of junction to ambient 28 ..
MP4301. ,Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.MP4301 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 ..
MP4303 ,Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.MP4303 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 ..
MP4303. ,Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.Thermal Characteristics Characteristics Symbol MaxUnit Thermal resistance of junction to ambient 28 ..
MSM6100 , MSM6100
MSM6100 , MSM6100
MSM6100 , MSM6100
MSM-6100 , MSM6100
MSM6250 , CHIPSET SOLUTION
MSM-6250 , CHIPSET SOLUTION
MP4212
Power MOS FET Module Silicon N&P Channel MOS Type (L2-pi-MOSV 4 in 1) High Power High Speed Switching Applications H-Switch Driver
MP4212 TOSHIBA Power MOS FET Module Silicon N&P Channel MOS Type (L2 -π-MOSV 4 in 1)
MP4212 High Power High Speed Switching Applications
H-Switch Driver 4 V gate drive Small package by full molding (SIP 10 pin) High drain power dissipation (4 devices operation)
: PT = 4 W (Ta = 25°C) Low drain-source ON resistance: RDS (ON) = 120 mΩ (typ.) (N-ch) 160 mΩ (typ.) (P-ch) High forward transfer admittance: |Yfs| = 5.0 S (typ.) (Nch) 4.0 S (typ.) (Pch) Low leakage current: IGSS = ±10 µA (max) (VGS = ±16 V) IDSS = 100 µA (max) (VDS = 60 V) Enhancement-mode: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C) Note 1: Avalanche energy (single pulse) applied condition
Nch: VDD = 25 V, starting Tch = 25°C, L = 7 mH, RG = 25 Ω, IAR = 5 A
Pch: VDD = −25 V, starting Tch = 25°C, L = 14.84 mH, RG = 25 Ω, IAR = −5 A
Note 2: Repetitive rating; pulse width limited by maximum channel temperature.
Industrial Applications
Unit: mm
Weight: 2.1 g (typ.)
