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MP4209
Power MOS FET Module Silicon N Channel MOS Type (L2-pi-MOSV 4 in 1) High Power High Speed Switching Applications. For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver
MP4209 TOSHIBA Power MOS FET Module Silicon N Channel MOS Type (L2 -π-MOSV 4 in 1)
MP4209 High Power, High Speed Switching Applications
For Printer Head Pin Driver and Pulse Motor Driver
For Solenoid Driver 4 V gate drive available Small package by full molding (SIP 10 pin) High drain power dissipation (4 devices operation)
: PT = 4 W (Ta = 25°C) Low drain-source ON resistance: RDS (ON) = 0.28 Ω (typ.) High forward transfer admittance: |Yfs| = 3.5 S (typ.) Low leakage current: IGSS = ±10 µA (max) (VGS = ±16 V) IDSS = 100 µA (max) (VDS = 100 V) Enhancement-mode: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C) Tstg −55 to 150
Note 1: Avalanche energy (single pulse) applied condition
VDD = 50 V, starting Tch = 25°C, L = 20 mH, RG = 25 Ω, IAR = 3 A
Note 2: Repetitive rating; pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device. Please handle with caution.
Industrial Applications
Unit: mm
Weight: 2.1 g (typ.)
