MP4208 ,Power MOS FET Module Silicon P Channel MOS Type (L2-pi-MOSV 4 in 1) High Power High Speed Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.Applications. Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching. −4 V gate ..
MP4209 ,Power MOS FET Module Silicon N Channel MOS Type (L2-pi-MOSV 4 in 1) High Power High Speed Switching Applications. For Printer Head Pin Driver and Pulse Motor Driver For Solenoid DriverApplications Unit: mmFor Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver ..
MP4211 ,Power MOS FET Module Silicon N Channel MOS Type (L2-pi-MOSV 4 in 1) High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid DriverThermal Characteristics Characteristics Symbol MaxUnit Thermal resistance of channel to ambient ΣR ..
MP4212 ,Power MOS FET Module Silicon N&P Channel MOS Type (L2-pi-MOSV 4 in 1) High Power High Speed Switching Applications H-Switch DriverApplications Unit: mmH-Switch Driver 4 V gate drive Small package by full molding (SIP 10 ..
MP4212 ,Power MOS FET Module Silicon N&P Channel MOS Type (L2-pi-MOSV 4 in 1) High Power High Speed Switching Applications H-Switch DriverElectrical Characteristics (Ta = 25°C) (Nch MOS FET) Characteristics Symbol Test Condition Min Typ. ..
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MSM6100 , MSM6100
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MP4208
Power MOS FET Module Silicon P Channel MOS Type (L2-pi-MOSV 4 in 1) High Power High Speed Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
MP4208 TOSHIBA Power MOS FET Module Silicon P Channel MOS Type (L2 -π-MOSV 4 in 1)
MP4208 High Power High Speed Switching Applications.
Hammer Drive, Pulse Motor Drive and Inductive Load Switching. −4 V gate drive available Small package by full molding (SIP 10 pin) High drain power dissipation (4 devices operation)
: PT = 4 W (Ta = 25°C) Low drain-source ON resistance: RDS (ON) = 0.2 Ω (typ.) Low leakage current: IGSS = ±10 µA (max) (VGS = ±16 V) IDSS = −100 µA (max) (VDS = −60 V) Enhancement-mode: Vth = −0.8 to −2.0 V (ID = −1 mA)
Maximum Ratings (Ta = 25°C)
Array Configuration Industrial Applications
Unit: mm
Weight: 2.1 g (typ.) 10
