MP4207 ,N & P CHANNEL MOS TYPE (HIGH POWER HIGH SPEED SWITCHING APPLICATIONS, HELECTRICAL CHARACTERISTICS (Ta=25°C) (Nch MOS FET)CHARACTERISTIC SYMBOL TEST CONDITION UNITGateLeak ..
MP4208 ,Power MOS FET Module Silicon P Channel MOS Type (L2-pi-MOSV 4 in 1) High Power High Speed Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.Applications. Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching. −4 V gate ..
MP4209 ,Power MOS FET Module Silicon N Channel MOS Type (L2-pi-MOSV 4 in 1) High Power High Speed Switching Applications. For Printer Head Pin Driver and Pulse Motor Driver For Solenoid DriverApplications Unit: mmFor Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver ..
MP4211 ,Power MOS FET Module Silicon N Channel MOS Type (L2-pi-MOSV 4 in 1) High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid DriverThermal Characteristics Characteristics Symbol MaxUnit Thermal resistance of channel to ambient ΣR ..
MP4212 ,Power MOS FET Module Silicon N&P Channel MOS Type (L2-pi-MOSV 4 in 1) High Power High Speed Switching Applications H-Switch DriverApplications Unit: mmH-Switch Driver 4 V gate drive Small package by full molding (SIP 10 ..
MP4212 ,Power MOS FET Module Silicon N&P Channel MOS Type (L2-pi-MOSV 4 in 1) High Power High Speed Switching Applications H-Switch DriverElectrical Characteristics (Ta = 25°C) (Nch MOS FET) Characteristics Symbol Test Condition Min Typ. ..
MSM6100 , MSM6100
MSM6100 , MSM6100
MSM6100 , MSM6100
MSM-6100 , MSM6100
MSM6250 , CHIPSET SOLUTION
MSM-6250 , CHIPSET SOLUTION
MP4207
N & P CHANNEL MOS TYPE (HIGH POWER HIGH SPEED SWITCHING APPLICATIONS, H
TOSHIBA MP4207
TOSHIBA POWER MOS FET MODULE SILICON N & P CHANNEL MOS TYPE (ty-ar-MOST 4 IN 1)
MP4207
C) HIGH POWER HIGH SPEED SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS
Unit in mm
O H - SWITCH DRIVER
o 4-Volt Gate Drive.
25.2:02
. Small Package by Full Molding. (SIP 10 Pin) "
. High Drain Power Dissipation. (4 Devices Operation) sv?,
: PT=4W @Ta=25°C I , W WW“ ii'
. Low Drain-Source ON Resistance J _ b.
j 2.54 0.55A0.15
RDS (ON)=90mn TYP. (Nch) 441.2045 i'-,';. g
RDS (0N)=170m0 TYP.(Pch) 3 S 3
f, n n n u u n ED u t_,
. Low Leakage Current : IGSS= iIOIaA (Max.) @VGS= i16V 1 101
IDsszloo/JA (Max.) @VD3260V 1,10 SOURCE
. Enhancement-Mode .' Vth--0.8-2.0V @ID =IrnA i: g’ 2’ , (tlf,,
(PIN 1 AND PIN 10 ARE
DISCONNECTED INTERNALLY)
MAXIMUM RATINGS (Ta = 25°C) JEDEC -
RATING EIAJ -
CHARACTERISTIC SYMBOL Nch Pch UNIT T OSHIB A 2- 25A 1 C
Drain-Source Voltage VDSS 60 -60 V ARRAY CONFIGURATION
Gate-Source Voltage VGSS i20 :20 V po
Drain Current ID 5 -5 A -
Peak Drain Current IDP 10 -10 A (s, I t|_ I'') I '
Drain Power Dissipation _ --l
(1 Device Operation,Ta=25°C) PD 2.0 W 7 9
Drain Power Dissipation
(4 Devices Operation,Ta=25°C) PT 4.0 W 3 5
Channel Temperature Teh 150 "C l-- --l
Storage Temperature Range Tste -55--150 T 2 _ rd 4
THERMAL CHARACTERISTICS (L1
CHARACTERISTIC SYMBOL RATING UNIT
Thermal Resistance of Channel to Ambient
(4 Devices Operation, Ta=25°C) ERth (ch-a) 3 C/W
Maximum Lead Temperature for Soldering Purposes T 260 "C
(3.2mm from Case for 10 second) L
THIS TRANSISTOR IS AN ELECTROSTATIC SENSITIVE DEVICE. PLEASE HANDLE WITH CAUTION.
1 2001-05-24
TOSHIBA MP4207
ELECTRICAL CHARACTERISTICS(Ta=25°C) (Nch MOS FET)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current IGSS Vas-- 1' 16V, VDS--0 - - , 10 PA
Drain Cut-off Current IDSS VDs=60V, VGS=0 - - 100 PA
Drain-Source
Breakdown Voltage V(BR)DSS ID_10mA’ VGS--0 60 - -
Gate Threshold Voltage Vth VDs=10V, ID=1mA 0.8 - 2.0
Forward Transfer Admittance IYfSI VDs=10V, ID=2.5A 3.0 6.0 - S
Drain-Source ON Resistance RDS(ON) ID=2.5A, VGs=4V - 135 200 mi)
Drain-Source ON Resistance RDS(ON) ID=2.5A, VGs=10V - 90 130 mi)
Input Capacitance Ciss - 500 900 pF
Reverse Transfer Capacitance Crss VDS=10V, VGS=0, f=1MHZ - 90 180 pF
Output Capacitance Coss - 290 500 pF
Rise Time tr - 20 40
Turn-on Time ton - 60 120
Switching Time ms
Fall Time tf "Tmf--. 30V - 80 160
VIN : tr, tf<5ns
Turn-off Time toff Du. S1% (ZOUT=5OQ) - 300 600
Tgtal grate ClgrgeG D . Qg - 20 40 n0
( ate- ource us ate- rain) ID--. 5A, V GS" 10V
Gate-Source Charge Qgs VDD=48V - 14 - nC
Gate-Drain ("Miller") Charge di - 6 - nC
SOURCE-DRAIN DIODE RATING AND CHARACTERISTICS(Ta=25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYPE MAX. UNIT
Drain Reverse Current IDR - - - 5 A
Peak Drain Reverse Current IDRP - - - 10 A
Diode Foward Voltage VDSF IDR=5A, VGSZO - - -1.5 V
Reverse Recovery Time trr IDR=5A,VGS=0 - 140 - ns
Reverse Recovery Charge er dIDR/ dt= -50A/ gs - 0.4 - PC
2 2001-05-24
TOSHIBA MP4207
ELECTRICAL CHARACTERISTICS(Ta =25°C) (Pch MOS FET)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current IGSS Vas-- -f_- 16V, VDS--0 - - , 10 PA
Drain Cut-off Current IDSS V133: -60V, VGS=0 - - -100 PA
Drain-Source
Breakdown Voltage V(BR)DSS In-- -10mA, VGS--0 -60 - -
Gate Threshold Voltage Vth VDS= - 10V, ID-- -IrnA -0.8 - -2.0 V
Forward Transfer Admittance IYfSI VDS= - 10V, ID: -2.5A 1.0 2.0 - S
Drain-Source ON Resistance RDS (ON) ID-- -2.5A, VGS= -4V - 250 400 mi)
Drain-Source ON Resistance RDS (ON) ID-- -2.5A, Vas-- - 10V - 170 250 mi)
Input Capacitance Ciss - 500 720 pF
Reverse Transfer Capacitance Crss VDS= -10V, VGS=0, f=1MHZ - 90 150 pF
Output Capacitance Coss - 290 420 pF
Rise Time tr ID-- -2.5A - 120 240
- 10V VIN _ VOUT
Turn-on Time ton U f-o g - 130 260
Switching Time H g ns
Fall Time tf 10ps 'rr. - 80 160
VDD=. - 30V
. A73 :tr, tf<5ns
Turn-off Time toff Du. S1% (ZOUT=5OQ) - 200 400
Total Gate Clgrge D . Qg - 22 45 nC
(Gate-Source us Gate- rain) ID--. - 5A, V GS" - 10V
Gate-Source Charge Qgs VDD= -48V - 14 - nC
Gate-Drain ("Miller") Charge di - 8 - nC
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS(Ta =25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN TYPE MAX. UNIT
Drain Reverse Current IDR - - - -5 A
Peak Drain Reverse Current IDRP - - - -10 A
Diode Foward Voltage VDSF IDR-- - 5A, VGS = 0 - - 1.5 V
Reverse Recovery Time trr IDR = - 5A, VGS = 0 - 120 - ns
Reverse Recovery Charge er dIDR/ dt= -50A/ gs - 0.24 - PC
3 2001 -05-24
TOSHIBA
Neh FET
DRAIN CURRENT In (A) DRAIN CURRENT ID (A)
DRAIN-SOURCE 0N RESISTANCE
RDS(0N) (9.)
ID - VDS
COMMON
SOURCE
Tc = 25°C
VG5=2V
0 0.2 0.4 0.6 0.8 1.0 1.2
DRAIN-SOURCE VOLTAGE VDS (V)
ID - VGS
COMMON
SOURCE
VDs=10V
Tc=100°C
0 1 2 3 4 5 6
GATE-SOURCE VOLTAGE VGS (V)
RDS(0N) - ID
VGS = 4V
COMMON
SOURCE
Tc = 25°C
0.3 1 3 10 20
DRAIN CURRENT ID (A)
MP4207
ID - VDS
COMMON
SOURCE
Tc = 25°C
DRAIN CURRENT ID (A)
VGS = 2V
0 2 4 6 8 10 12
DRAIN-SOURCE VOLTAGE VDS (V)
lyfsl - ID
30 COMMON
SOURCE
VDS: 10v Tc=55°C
[stl (S)
FORWARD TRANSFER ADMITTANCE
0.1 0.3 1 3 10 20
DRAIN CURRENT ID (A)
RDS(ON) - Te
M 0.20 ID=5A
e 0.16
52 0.12
a g ID=5, 2.5, 1.2A
0,58 10
on: 0.08
g 0.04
-80 -40 0 40 80 120 160 200
CASE TEMPERATURE Te (°C)
TOSHIBA
Neh FET
IDR - VDS
COMMON
SOURCE
Tc = 25°C
DRAIN REVERSE CURRENT IDR (A)
0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 -3.2 -3.6
DRAIN-SOURCE VOLTAGE VDS (V)
VDS - VGS
COMMON
SOURCE
Tc = 25''C
DRAIN-SOURCE VOLTAGE VDS (V)
o 4 s 12 16 20
GATE-SOURCE VOLTAGE VGS (V)
DYNAMIC INPUT / OUTPUT
CAPACITANCE C (pF)
GATE THRESHOLD VOLTAGE Vth (V)
MP4207
CAPACITANCE - VDS
COMMON
SOURCE
3 VGS = 0V
f = 1 MHz
Te = 25°C
0.1 0.3 1 3 10 30 100
DRAIN-SOURCE VOLTAGE VDS (V)
Vth - Te
COMMON
SOURCE
2.0 VDS: 10V
ID = 1mA
-80 -40 0 40 80 120 160
CASE TEMPERATURE Te (°C)
CHARACTERISTICS 16
'i.?. VDD-- 12V COMMON E
8 SOURCE 8
> ID = 5A >
M Te = 25'C
:2 t'j'!
5.3 EA
0 10 20 30 40 50
TOTAL GATE CHARGE Qg (nC)
5 2001 -05-24
TOSHIBA MP4207
Pch FET
ID - VDS
COMMON COMMON
SOURCE SOURCE
A Te=25''C A Tc=25°C
s. 1t..1
g -2.5 ti
© D -2.5
VGS= -2V VGS= _2v
0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 0 -2 -4 -6 -8 -10 -12
DRAIN-SOURCE VOLTAGE vDs (V) DRAIN-SOURCE VOLTAGE vDs (V)
ID - VGS lyfsl - ID
COMMON
SOURCE
V = - 10V
COMMON
SOURCE
V = - 10V
lstl 6)
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
0 -2 -4 -6 -8 -10 -12 -0.1 -0.3 -1 -3 -10
GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A)
1 RDS(ON) - ID RDS(0N) - Te
COMMON 1.0
8 SOURCE 8
Tc=25°C
E 0. E 0.8
st; st:
“A 0.3 IV..,
$92 $92 0.6
p; A p; A
o z C) 2;
ti: (i? ta: 2
tp' . on:
iii, 0.05 E -2.5
-10 -1.2
0.03 0
-0.1 -0.3 -1 -3 -10 -80 -40 0 40 80 120 160
DRAIN CURENT ID (A) CASE TEMPERATURE Te (°C)
6 2001-05-24
TOSHIBA MP4207
Pch FET
IDR - VDS CAPACITANCE - VDS
A COMMON
s SOURCE
Tc=25°C
g A 1000
E v 500
E 0 300
i g 100
M 3: COMMON
t g 50 SOURSE
te; Ur 3 VGS--0V
H v =0 IV f=1MHz
E GS-- ' Te=25''C
0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 -0.1 -0.3 -1 -3 -10 -30 -100
DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (N)
VDS - VGS Vth - Te
COMMON
SOURCE
Tc = 25''C
COMMON
SOURCE
VDS: - 10V
ID = - lmA
DRAIN-SOURCE VOLTAGE VDS (V)
GATE THRESHOLD VOLTAGE Vth (V)
0 -4 -8 -12 -16 -20 -24 -80 -40 0 40 80 120 160
GATE-SOURCE VOLTAGE VGS (V) CASE TEMPERATURE Te (°C)
DYNAMIC INPUT / OUTPUT
CHARACTERISTICS
COMMON
SOURCE
ID = - 5A
Tc = 25"C
VDD-- -12V
DRAIN-SOURCE VOLTAGE VDS (V)
GATE-SOURCE VOLTAGE VGS (V)
0 10 20 30 40
TOTAL GATE CHARGE Qg (nC)
7 2001-05-24
TOSHIBA
DRAIN CURRENT ID (A)
rth - tw
MP4207
300 PULSE WIDTH.
BELOW FIGURE SHOW THERMAL RESISTANCE PER 1 UNIT VERSUS
THIS CURVE IS OBTAINED BY USING SINGLE NONREPETITIVE
PULSE WITH NO HEAT SINK AND ATTACHED ON A CIRCUIT ROAD.
C) 1 DEVICE OPERATION
C)? 2 DEVICES OPERATION
30 20 3 DEVICES OPERATION
dFt... co
C4) 4 DEVICES OPERATION
'iii?,' f
Etc 10
E 3 " I
'a' 1/
a / - - - -
g "r"'" rzelFzsz-zlfzza
e 1 / h
I CIRCUIT BOARD
'd.'001 0.01 0.1 1 10 100 1000
PULSE WIDTH tw (s)
SAFE OPERATING AREA PT - Ta
a licable to Neh and P
100prsk'4
X SINGLE NONREPETITIVE
PULSE Ta=25''C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN
TEMPERATURE.
AIO i30 k50 k100
DRAIN-SOURSE VOLTAGE VDS (V)
TOTAL POWER. DISSIPATION PT (W)
JUNCTION TEMPERATURE INCREASE
ATj (°C)
1 DEVICE OPERATION
2 DEVICES OPERATION
3 DEVICES OPERATION
4 DEVICES OPERATION
ATTACHED ON A
CIRCUIT BOARD
"Tcy'as ""211soes. \ugIRCUIg BOARD
co 'ssdt:::i??:t
's2tus
I, 40 80 120 160 200
AMBIENT TEMPERATURE Ta
ATS' - PT
v/kt))''''" 2;;
CIRCUIT BOARD
ATTACHED BOARD
CIRCUIT BOARD
l DEVICE OPERATION
2 DEVICES OPERATION
3 DEVICES OPERATION
4 DEVICES OPERATION
TOTAL POWER DISSIPATION PT (W)
TOSHIBA MP4207
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
9 2001-05-24
www.ic-phoenix.com
.
