MP4202 ,POWER MOS FET MODULE SILICON N CHANNEL MOS TYPEMP4202TOSHIBA POWER MOS FET MODULE SILICON N CHANNEL MOS TYPE (LZ-zr-MOSIII 4 IN 1)HIGH POWER HIGH ..
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MP4207 ,N & P CHANNEL MOS TYPE (HIGH POWER HIGH SPEED SWITCHING APPLICATIONS, HELECTRICAL CHARACTERISTICS (Ta=25°C) (Nch MOS FET)CHARACTERISTIC SYMBOL TEST CONDITION UNITGateLeak ..
MP4208 ,Power MOS FET Module Silicon P Channel MOS Type (L2-pi-MOSV 4 in 1) High Power High Speed Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.Applications. Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching. −4 V gate ..
MP4209 ,Power MOS FET Module Silicon N Channel MOS Type (L2-pi-MOSV 4 in 1) High Power High Speed Switching Applications. For Printer Head Pin Driver and Pulse Motor Driver For Solenoid DriverApplications Unit: mmFor Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver ..
MP4211 ,Power MOS FET Module Silicon N Channel MOS Type (L2-pi-MOSV 4 in 1) High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid DriverThermal Characteristics Characteristics Symbol MaxUnit Thermal resistance of channel to ambient ΣR ..
MSM5839C , 40-DOT SEGMENT DRIVER
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MSM6250 , CHIPSET SOLUTION
MP4202
POWER MOS FET MODULE SILICON N CHANNEL MOS TYPE
TOSHIBA
MP4202
TOSHIBA POWER MOS FET MODULE SILICON N CHANNEL MOS TYPE (L2-ar-MOSlII 4 IN 1)
HIGH POWER HIGH SPEED SWITCHING APPLICATIONS
HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD
MP4202
INDUSTRIAL APPLICATIONS
Unit in mm
SWITCHING
25110.2 _
l---'---'""---
0 4V Gate Drive Available rn, E
0 Small Package by Full Molding (SIP 10 Pin) if V U V U W r- g
0 High Drain Power Dissipation (4 Devices Operation) "'3.
'. PT=4W(Ta=25°C) 2.54 . 0.55:0.15
1.1 1015 tv',-', g
It Low Drain-Source ON Resistance : RDS(0N)=0.120 (Typ.) :3 ru. tl
0 Low Leakage Current .' IGSS= i5/1A(MaX.) (VGS= i16V) _ a n n n a u u n F v-
1nss=100pA(Max.) (VDs=60V) 1 10 ,
o Enhancement-Mode : Vth=0.8~2.0V (ID=1mA) 1 10 SOURCE
2, 4, 6, 8 GATE
3, 5, 7, 9 DRAIN
MAXIMUM RATINGS (Ta = 25°C)
(PIN 1 AND PIN 10 IS DIS-
CONNECTED INTERNALLY)
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage VDSS 60 V JEDEC -
Gate-Source Voltage VGSS :20 V EIAJ -
Drain Current ID 5 A TOSHIBA 2-25AlC
Peak Drain Current IDP 10 A Weight : 2.1g (Typ.)
Drain Power Dissipation
(1 Device Operation) PD 2.0 W
Drain Power Dissipation
(4 Devices Operation) PDT 4.0 W
Channel Temperature Teh 150 ''C
Storage Temperature Range Tstg -55--150 T
ARRAY CONFIGURATION
3 5 7 9
J} >% '- -
F- 4 H- 6 _ 8 H-
214: “d: “If? “dig:
1 c ty 10
1 2001-05-24
TOSHIBA MP4202
THERMAL CHARACTERISTICS
CHARACTERISTIC SYMBOL MAX. UNIT
Thermal Resistance of Channel to Ambient
s(4 Devices Operation, Ta=25°C)
Maximum Lead Temperature for Soldering Purposes
I(3.2mm from Case for 10s)
ERth (ch-a) 3 1.2 T / W
TL 260 "C
This Transistor is an Electrostatic Sensitive Device. Please Handle with Caution.
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current IGSS VGS = i 16V, VDS = 0 - - i 5 PA
Drain Cut-off Current IDSS VDS = 60V, VGS = 0 - - 100 PA
Drain-Source Breakdown
Voltage V (BR) DSS ID - lOmA, VGS - 0 60 - - V
Gate Threshold Voltage Vth VDS = 10V, ID = 1mA 0.8 - 2.0 V
Forward Transfer Admittance lyssl VDS = 10V, ID = 2.5A 1.5 3.5 - S
. . RDS (ON) ID=2.5A, VGs=4V - 0.2 0.32
Drain-Source ON Resistance RDS (ON) ID = 2. 5A, VGS = 10V - 0.12 0.2 n
Input Capacitance Ciss - 380 -
Reverse Transfer Capacitance Crss VDS = 10V, VGS = o, f = lMHz - 95 - pF
Output Capacitance Coss - 280 -
Rise Time tr ID = 2.5A - 12 -
. TCrt VIN cl VOUT
Switching Turn-on Time ton 0 H g a - 20 - ns
Time Fall Time tf IO/s 50
VDD'=.30V
. VIN : tr, tf<5ns
Turn-off Time toff Du.S 1% - 140 -
Total Gate Charge
(Gate-Source Plus Gate-Drain) Qg I =5A V =10V V =48V - 20 - C
Gate-Source Charge Qgs D= ' GS-- ' DD-- - 12 - n
Gate-Drain ("Mil1er") Charge di - 8 -
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Drain Reverse Current IDR - - - 5 A
Peak Drain Reverse Current IDRP - - - 10 A
Diode Forward Voltage VDSF IDR=5A, VGS=0 - -1.0 -1.7 V
Reverse Recovery Time trr IDR=5A, VGS=0 - 120 - ns
Reverse Recovery Charge er dIDR/ dt= -20A/ ,us - 0.09 - PC
2 2001-05-24
TOSHIBA MP4202
ID - VDs ID - VDS
COMMON COMMON SOURCE
SOURCE 4.5 Tc=25°C
Tc=25°C
tl. v 4.0
S? 3.2 I?
w 3.0 w
a 2.8 ii
- 2.6 -
0 0.4 0.8 1.2 1.6 2.0 2.4 0 4 8 12 16 20 24
DRAIN-SOURCE VOLTAGE vDs (V) DRAIN-SOURCE VOLTAGE VDs (V)
ID - VGS RDS(0N) - ID
COMMON COMMON
SOURCE SOURCE
VDs= 10v 8 Tc-- 25°C
s < 0.5
- Fyg 0.3
ie, Egg
E fl 0.1
a Te=100''C 2
25 a 0.05
0 2 4 6 8 10 12 0.3 0.5 1 3 5 10 20
GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A)
VDS - VGS RDS(0N) - Te
COMMON
"iS' SOURCE 0.4 COMMON
Tc=25°C 8 SOURCE
w 'ls:: 0.3
g 0 g 0.2
Li Si) o
5.2 D”
i? 8 0.1
E 2.5 Q 0
ID = 1.3A - 80 - 4O 0 40 80 120 160
0 l 8 12 16 20 24 CASE TEMPERATURE Tc CC)
GATE-SOURCE VOLTAGE VGS (V)
3 2001-05-24
TOSHIBA
In! (S) GATE THRESHOLD VOLTAGE vth (V)
FORWARD TRANSFER ADMITTANCE
CAPACITANCE C (p?)
Vth - Te
COMMON SOURCE
VDS = 10V
ID = 1mA
-80 -40 0 40 80 120 160
CASE TEMPERATURE Tc (°C)
lstl - ID
COMMON SOURCE
VDs=10V
0.3 0.5 1 3 5 10 30
DRAINCURRENT ID (A)
CAPACITANCE - VDS
COMMON
50 SOURCE
30 VGs--0
f= IMHz
Tc=25°C
0.1 0.3 1 3 10 30 100
DRAIN-SOURCE VOLTAGE VDS (V)
t (115)
SWITCHIN G TIME
DRAIN-SOURCE VOLTAGE VDS (V)
IDR (A)
DRAIN REVERSE CURRENT
MP4202
SWITCHING TIME - ID
DUTY CYCLE s 0.5% ID
VIN: tr, tf< 5ns VIN
500 n RL
0.1 0.3 0.5 1 3 5 10
DRAIN CURRENT ID (A)
DYNAMIC INPUT / OUTPUT
80 CHARACTERISTICS 16
COMMON SOURCE
ID = 5A
Tc = 25°C
VDD = 12V
GATE—SOURCE VOLTAGE VGS (V)
0 8 16 24 32 40
TOTAL GATE CHARGE Qg (nC)
IDR - VDS
COMMON
SOURCE
Tc = 25°C
-0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 -3.0
DRAIN-SOURCE VOLTAGE VDS (V)
TOSHIBA MP4202
rth - tw
M CURVES SHOULD BE APPLIED IN
0 THERMAL LIMITED AREA
E 100 (SINGLE NONREPETITIVE PULSE)
F BELOW FIGURE SHOW THERMAL
''l RESISTANCE PER 1 UNIT --
EA 30 VERSUS PULSE WIDTH. ‘39
< t ..,rr"'
E s - - NO HEAT SINK AND ATTACHED
F t" 3 I ON A CIRCUIT BOARD -
E " / co 1 DEVICE OPERATION
m _...--"''' C2) 2 DEVICES OPERATION
a 1 -. (5) 3 DEVICES OPERATION - -
E 0.5 Ci) 4 DEVICES OPERATION CI CUIT BOARD
5 0.001 0.01 0.1 1 10 100 1000
PULSE WIDTH tw (s)
SAFE OPERATING AREA PT - Ta
g (1) 1 DEVICE OPERATION
v (2) 2 DEVICES OPERATION
IDP MAX. E. CO 3 DEVICES OPERATION
IO tk 6 CO 4 DEVICES OPERATION
100 >:< g ATTACHED ON A
ID MAX. ps F" CIRCUIT BOARD
5 1msik. E Cf)
10ras)k. 'fi' 4 Ps
,4 3 100ms% D 3 "s,', e C
s E f 'tr:,
CI t CO "s 's, CIRCUIT BOARD
- tk 2 ' "'s 's,
A co "s.
g l [9, s2tit
t' o 40 80 120 160 200
E 0.5 AMBIENT TEMPERATURE Ta (°C)
0.3 ATCh - PT
y.f SINGLE NONREPETITIVE
PULSE Ta=25°C CIC) (2) C2 C)
0.1 CURVES MUST BE DERATED 120 1 / r A
LINEARLY WITH INCREASE IN / ///
TEMPERATURE. VDSS MAX. k -
l / / / m==u
0.05 / / f? "f"tifef"
3 5 10 30 50 100 //
ATch (°C)
//// CIRCUIT BOARD
's'" ATTACHED ON A
CIRCUIT BOARD
2f f''" C) 1 DEVICE OPERATION
f? C)) 2 DEVICES OPERATION
O) 3 DEVICES OPERATION
@ 4 DEVICES OPERATION
0 1 2 3 4 5
TOTAL POWER DISSIPATION PT (W)
DRAIN-SOURCE VOLTAGE VDS (V)
CHANNEL TEMPERATURE INCREASE
5 2001-05-24
TOSHIBA MP4202
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
6 2001-05-24
www.ic-phoenix.com
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