MP4101 ,Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive. Inductive Load Switching.Thermal Characteristics Characteristics Symbol MaxUnit Thermal resistance of junction to ambient 31 ..
MP4104 ,Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.Thermal Characteristics Characteristics Symbol MaxUnit Thermal resistance of junction to ambient 31 ..
MP4202 ,POWER MOS FET MODULE SILICON N CHANNEL MOS TYPEMP4202TOSHIBA POWER MOS FET MODULE SILICON N CHANNEL MOS TYPE (LZ-zr-MOSIII 4 IN 1)HIGH POWER HIGH ..
MP4203 ,TOSHIBA POWER MOS FET MODULE SILICON P CHANNEL MOS TYPEAPPLICATIONSUnit in mmHAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOADSWITCHING l l25.2 -+0.24V G ..
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MP4208 ,Power MOS FET Module Silicon P Channel MOS Type (L2-pi-MOSV 4 in 1) High Power High Speed Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.Applications. Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching. −4 V gate ..
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MSM6100 , MSM6100
MP4101
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive. Inductive Load Switching.
MP4101 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1)
MP4101 High Power Switching Applications.
Hammer Drive, Pulse Motor Drive.
Inductive Load Switching. Small package by full molding (SIP 10 pin) High collector power dissipation (4 devices operation)
: PT = 4 W (Ta = 25°C) High collector current: IC (DC) = 4 A (max) High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) Zener diode included between collector and base.
Maximum Ratings (Ta = 25°C) Tstg
Array Configuration Industrial Applications
Unit: mm
Weight: 2.1 g (typ.)
R1 R2 9
R1 ≈ 4.5 kΩ R2 ≈ 300 Ω
