MP4024 ,Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.Thermal Characteristics Characteristics Symbol MaxUnit Thermal resistance of junction to ambient 31 ..
MP4101 ,Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive. Inductive Load Switching.Thermal Characteristics Characteristics Symbol MaxUnit Thermal resistance of junction to ambient 31 ..
MP4104 ,Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.Thermal Characteristics Characteristics Symbol MaxUnit Thermal resistance of junction to ambient 31 ..
MP4202 ,POWER MOS FET MODULE SILICON N CHANNEL MOS TYPEMP4202TOSHIBA POWER MOS FET MODULE SILICON N CHANNEL MOS TYPE (LZ-zr-MOSIII 4 IN 1)HIGH POWER HIGH ..
MP4203 ,TOSHIBA POWER MOS FET MODULE SILICON P CHANNEL MOS TYPEAPPLICATIONSUnit in mmHAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOADSWITCHING l l25.2 -+0.24V G ..
MP4207 ,N & P CHANNEL MOS TYPE (HIGH POWER HIGH SPEED SWITCHING APPLICATIONS, HELECTRICAL CHARACTERISTICS (Ta=25°C) (Nch MOS FET)CHARACTERISTIC SYMBOL TEST CONDITION UNITGateLeak ..
MSM5832 , MICROPROCESSOR REAL-TIME CLOCK/CALENDAR
MSM58321 , REAL TIME CLOCK/CALENDAR
MSM58321 , REAL TIME CLOCK/CALENDAR
MSM58321. , REAL TIME CLOCK/CALENDAR
MSM5839C , 40-DOT SEGMENT DRIVER
MSM6100 , MSM6100
MP4024
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
MP4024 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1)
MP4024 High Power Switching Applications.
Hammer Drive, Pulse Motor Drive and Inductive Load Switching. Small package by full molding (SIP 10 pin) Built-in resistance (RB). Surge voltage is clamped by zener diode (C-B). Low VCE (sat): VCE (sat) = 1.5 V (max) (IC = 1 A, VBH = 4.2 V) High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
Maximum Ratings (Ta = 25°C) Tstg
Array Configuration Industrial Applications
Unit: mm
Weight: 2.1 g (typ.) 10
R1 ≈ 5 kΩ R2 ≈ 300 Ω 5 7 9
RB ≈ 3.6 kΩ
