MP4021. ,Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.Applications High Power Switching
MP4024 ,Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.Thermal Characteristics Characteristics Symbol MaxUnit Thermal resistance of junction to ambient 31 ..
MP4101 ,Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive. Inductive Load Switching.Thermal Characteristics Characteristics Symbol MaxUnit Thermal resistance of junction to ambient 31 ..
MP4104 ,Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.Thermal Characteristics Characteristics Symbol MaxUnit Thermal resistance of junction to ambient 31 ..
MP4202 ,POWER MOS FET MODULE SILICON N CHANNEL MOS TYPEMP4202TOSHIBA POWER MOS FET MODULE SILICON N CHANNEL MOS TYPE (LZ-zr-MOSIII 4 IN 1)HIGH POWER HIGH ..
MP4203 ,TOSHIBA POWER MOS FET MODULE SILICON P CHANNEL MOS TYPEAPPLICATIONSUnit in mmHAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOADSWITCHING l l25.2 -+0.24V G ..
MSM5832 , MICROPROCESSOR REAL-TIME CLOCK/CALENDAR
MSM58321 , REAL TIME CLOCK/CALENDAR
MSM58321 , REAL TIME CLOCK/CALENDAR
MSM58321. , REAL TIME CLOCK/CALENDAR
MSM5839C , 40-DOT SEGMENT DRIVER
MSM6100 , MSM6100
MP4021-MP4021.
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
MP4021 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1)
MP4021 High Power Switching Applications.
Hammer Drive, Pulse Motor Drive and Inductive Load Switching. Small package by full molding (SIP 10 pin) High collector power dissipation (4 devices operation)
: PT = 4 W (Ta = 25°C) High collector current: IC (DC) = 2 A (max) High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) Zener diode included between collector and base.
Maximum Ratings (Ta = 25°C) Tstg
Array Configuration Industrial Applications
Unit: mm
Weight: 2.1 g (typ.)
R1 R2
R1 ≈ 5 kΩ, R2 ≈ 300 Ω 5
