MN3610 ,Image Pickup DevicesFeatures ø 4 19 øR 2A• 2048 floating photodiodes and n-channel buried type CCD shift ø 5 18 NC1Breg ..
MN3610H ,Image Pickup DevicesAbsolute Maximum Ratings (Ta=25˚C, V =0V)SSParameter Symbol Rating UnitVPower supply voltage DD – 0 ..
MN3611 ,Image Pickup DevicesFeatures ø 4 19 øR 2• 2160 floating photodiodes and n-channel buried type CCD shiftNC 5 18 NCregist ..
MN3611RE ,Image Pickup DevicesAbsolute Maximum Ratings (Ta=25˚C, VSS=0V)Parameter Symbol Rating UnitVDDPower supply voltage – 0.3 ..
MN3615 ,Image Pickup DevicesFeatures ø 4 19 øR 2A• 2592 floating photodiodes and n-channel buried type CCD shift ø 5 18 NC1Breg ..
MN3644D ,Image Pickup DevicesFeatures V 4 19 OGSSA• 2048 floating photodiodes and n-channel buried type CCD shiftNC 5 18 NCregis ..
MRF3095 ,MICROWAVE LINEAR POWER TRANSISTORS**Order this documentSEMICONDUCTOR TECHNICAL DATAby MRF3094/DThe RF Line** * ** Designed for Class ..
MRF325 ,BROADBAND RF POWER TRANSISTOR NPN SILICONELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)CCharacteristic Symbol Min Typ Max Un ..
MRF326 ,BROADBAND RF POWER TRANSISTOR NPN SILICONELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)CCharacteristic Symbol Min Typ Max Un ..
MRF329 ,BROADBAND RF POWER TRANSISTOR NPN SILICONELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)CCharacteristic Symbol Min Typ Max Un ..
MRF338 ,BROADBAND RF POWER TRANSISTOR NPN SILICONELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Typ Max Uni ..
MRF373A ,MRF373AR1, MRF373ALSR1 470-860 MHz, 75 W, 32 V Lateral N-Channel Broadband RF Power MOSFETsOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF373A/DThe RF MOSFET Line ..
MN3610
