MN3209 ,256 STAGE LOW VOLTAGE OPERATION LOW NOISE BBDGeneral descriptionThe MN3209 is a 256-stage low voltage operation ' =5V) low noise BBD that provid ..
MN3307 ,Microcomputers Application-Specific Standard-Product ICsPin DescriptionsPin No. Symbol Pin Name Description1 GND Ground pin Connected to ground.2 CP2 Clock ..
MN34595 ,Image Sensors for Digital Still CamerasFeaturesy Type-1 / 2.33" 16.2 mega pixel CCD image sensory Image size : Type 1/2.33y Unit cell size ..
MN35502 ,For Video稟udiofeatures a built-in digital filter with 16/20-bit input.LRCK 2 27 RSBUPIt uses pulse edge modulatio ..
MN35503 ,For Video稟udioFeatures OUT1D 13 16 OUT2D2 Built-in 8-fold oversampling digital filter using I S bus AV 14 15 AVSS ..
MN3610 ,Image Pickup DevicesFeatures ø 4 19 øR 2A• 2048 floating photodiodes and n-channel buried type CCD shift ø 5 18 NC1Breg ..
MRF21085 ,MRF21085, MRF21085R3, MRF21085SR3, MRF21085LSR3 2170 MHz, 90 W, 28 V Lateral N-Channel RF Power MOSFETsTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case R 0.78 °C ..
MRF21090 ,MRF21090, MRF21090S 2170 MHz, 90 W, 28 V Lateral N-Channel RF Power MOSFETsMAXIMUM RATINGSRating Symbol Value UnitDrain–Source Voltage V 65 VdcDSSGate–Source Voltage V +15, – ..
MRF21090 ,MRF21090, MRF21090S 2170 MHz, 90 W, 28 V Lateral N-Channel RF Power MOSFETsOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF21090/DThe RF Sub–Micron MOSFET Line ..
MRF21090 ,MRF21090, MRF21090S 2170 MHz, 90 W, 28 V Lateral N-Channel RF Power MOSFETsOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF21090/DThe RF Sub–Micron MOSFET Line ..
MRF21090 ,MRF21090, MRF21090S 2170 MHz, 90 W, 28 V Lateral N-Channel RF Power MOSFETsMAXIMUM RATINGSRating Symbol Value UnitDrain–Source Voltage V 65 VdcDSSGate–Source Voltage V +15, – ..
MRF21090 ,MRF21090, MRF21090S 2170 MHz, 90 W, 28 V Lateral N-Channel RF Power MOSFETsTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case R 0.65 °C ..
MN3209
