MN3009 ,256-STAGE LOW NOISE BBDAbsolute Maximum Ratings (Ta = 25°C)Item Symbol Ratings UnitTerminal Voltage VDD, Vac, ch, V. --18- ..
MN3010 ,Microcomputers Application-Specific Standard-Product ICsElectrical Characteristics (Ta = 25°C, VDD = chL = -15V, chH = 0V, Vss = -14V, Ru = 100ki2)Conditio ..
MN3011 ,3328-STAGE BBD WITH 6 TAPSAbsolute Maximum Ratings (Ta = 25°C)Item Symbol Ratings Unit RemarksTerminal Voltage V00, V66 -18-- ..
MN3101 ,CLOCK GENERATOR/DRIVER CMOS LSI FOR BBDFeaturesq BBD direct driving capability of up to two MN3005s(equivalent to 8192-stages).Self and se ..
MN3102 ,V(dd): -18 to +0.3V; 3mA; 45mW; integrated circuit (MOS)Electrical Characteristics (Ta=25°C)Maximum Ratings(Ta==25"C)Type No. FunctionItem Symbol Condition ..
MN3105 ,Microcomputers Application-Specific Standard-Product ICsElectrical Characteristics Ta=25°CParameter Symbol Conditions min typ max UnitSupply current I No ..
MRF19085 ,MRF19085, MRF19085R3, MRF19085SR3, MRF19085LSR3 1990 MHz, 90 W, 26 V Lateral N-Channel RF Power MOSFETsTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case R 0.64 °C ..
MRF19090 ,MRF19090, MRF19090S, MRF19090SR3 1990 MHz, 90 W, 26 V Lateral N-Channel RF Power MOSFETsTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case R 0.65 °C ..
MRF19090S ,RF POWER FIELD EFFECT TRANSISTORSOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF19090/DThe RF MOSFET Line ..
MRF19090S ,RF POWER FIELD EFFECT TRANSISTORSTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case R 0.65 °C ..
MRF19090S ,RF POWER FIELD EFFECT TRANSISTORSMAXIMUM RATINGSRating Symbol Value UnitDrain–Source Voltage V 65 VdcDSSGate–Source Voltage V +15, – ..
MRF19090S ,RF POWER FIELD EFFECT TRANSISTORSOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF19090/DThe RF MOSFET Line ..
MN3009
