MN3003 ,High-accuracy 10-bit D/A converterElectrical Characteristics (c = 100pF, fcp = v; fosc (adjustable by R1),Ta = 25°CCondition. . f = 4 ..
MN3005 ,4096-STAGE LONG DELAY BBDElectrical Characteristics (Ta = 25°C, VDD = kve = --15V, VCPH = 0V, VGG = --14V, Ru = 100ki2)Item ..
MN3006 ,128-STAGE ECONOMY TYPE BBDElectrical Characteristics (Ta = 25°C, VDD = VCPL = -15V, VCPH = 0V, VGG = --14V, RL = 100ki2)Condi ..
MN3007 ,Microcomputers/ControllersGeneral descriptionThe MN3007 is a 1024-stage long delay low noise BBD thatprovides a signal delay ..
MN3008 ,2048-Stage Low Noise BBDElectrical Characteristics (Ta = 25°C, VDD = chL = -15V, chH = 0V, VGG = -14V, Rt. = 100ki2)Item Sy ..
MN3009 ,256-STAGE LOW NOISE BBDAbsolute Maximum Ratings (Ta = 25°C)Item Symbol Ratings UnitTerminal Voltage VDD, Vac, ch, V. --18- ..
MRF19060 ,MRF19060, MRF19060R3, MRF19060SR3 1990 MHz, 60 W, 26 V Lateral N-Channel RF Power MOSFETsTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case R 0.97 °C ..
MRF19085 ,MRF19085, MRF19085R3, MRF19085SR3, MRF19085LSR3 1990 MHz, 90 W, 26 V Lateral N-Channel RF Power MOSFETsTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case R 0.64 °C ..
MRF19090 ,MRF19090, MRF19090S, MRF19090SR3 1990 MHz, 90 W, 26 V Lateral N-Channel RF Power MOSFETsTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case R 0.65 °C ..
MRF19090S ,RF POWER FIELD EFFECT TRANSISTORSOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF19090/DThe RF MOSFET Line ..
MRF19090S ,RF POWER FIELD EFFECT TRANSISTORSTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case R 0.65 °C ..
MRF19090S ,RF POWER FIELD EFFECT TRANSISTORSMAXIMUM RATINGSRating Symbol Value UnitDrain–Source Voltage V 65 VdcDSSGate–Source Voltage V +15, – ..
MN3003
