MMSF3300R2 ,HDTMOS single N-channel field effect transistorMAXIMUM RATINGS (T = 25°C unless otherwise specified)JParameter Symbol Value UnitDrain–to–Source Vo ..
MMSF3350 ,Single N-Channel Field Effect TransistorMAXIMUM RATINGS (T = 25°C unless otherwise specified)JParameter Symbol Value UnitDrain–to–Source Vo ..
MMSF3P02HDR2 ,Power MOSFET 3 Amps, 20 Voltsblock diagram of the circuit configuration.SPICE, PSPICE, HSPICE, and Saber models available to dow ..
MMSF4205 ,OBSOLETEELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Typ Max Unit ..
MMSF7N03HD ,OBSOLETEhttp://onsemi.com3R , DRAIN-TO-SOURCE RESISTANCER , DRAIN-TO-SOURCE RESISTANCE (OHMS) I , DRAIN CUR ..
MMSF7N03ZR2 ,Single N-Channel Monolithic Zener ESD Protected GateELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Typ Max Unit ..
MPC2605ZP66 ,Integrated Secondary Cache for PowerPC Microprocessors**Order this documentby MPC2605/DSEMICONDUCTOR TECHNICAL DATAMPC2605Product PreviewIntegrated Secon ..
MPC506AP ,16-Channel Single-Ended Input Analog MultiplexerPIN CONFIGURATIONTop ViewTop View28 Out 28 Out A+V 1 +V 1SUPPLY SUPPLY –V27 –V Out B 2 27NC 2 SUPPL ..
MPC506APG4 , 16-Channel Single-Ended Input Analog MultiplexerELECTRICAL CHARACTERISTICSSupplies = +15V, –15V; V (Pin 13) = Open; V (Logic Level High) = +4.0V; V ..
MPC506AU ,16-Channel Single-Ended Input Analog MultiplexerPIN CONFIGURATIONTop ViewTop View28 Out 28 Out A+V 1 +V 1SUPPLY SUPPLY –V27 –V Out B 2 27NC 2 SUPPL ..
MPC506AU/1K ,16-Channel Single-Ended Input Analog MultiplexerMPC506MPC507MPC506AMPC507ASBFS018A – JANUARY 1988 – REVISED OCTOBER 2003Single-Ended 16-Channel/Dif ..
MPC506AUG4 ,16-Channel Single-Ended Input Analog Multiplexer 28-SOIC -40 to 85ELECTRICAL CHARACTERISTICSSupplies = +15V, –15V; V (Pin 13) = Open; V (Logic Level High) = +4.0V; V ..
MMSF3300R2
HDTMOS single N-channel field effect transistor
-
Power Surface Mount Products - -
WaveFET devices are an advanced series of power MOSFETs which utilize Motorola’s
latest MOSFET technology process to achieve the lowest possible on–resistance per silicon
area. They are capable of withstanding high energy in the avalanche and commutation
modes and the drain–to–source diode has a very low reverse recovery time. WaveFET
devices are designed for use in low voltage, high speed switching applications where power
efficiency is important. Typical applications are dc–dc converters, and power management
in portable and battery powered products such as computers, printers, cellular and cordless
phones. They can also be used for low voltage motor controls in mass storage products
such as disk drives and tape drives. The avalanche energy is specified to eliminate the
guesswork in designs where inductive loads are switched and offer additional safety margin
against unexpected voltage transients. Characterized Over a Wide Range of Power Ratings Ultralow RDS(on) Provides Higher Efficiency and
Extends Battery Life in Portable Applications Logic Level Gate Drive — Can Be Driven by
Logic ICs Diode Is Characterized for Use In Bridge Circuits Diode Exhibits High Speed, With Soft Recovery IDSS Specified at Elevated Temperature Avalanche Energy Specified Miniature SO–8 Surface Mount Package —
Saves Board Space
MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)
DEVICE MARKING ORDERING INFORMATIONThis document contains information on a new product. Specifications and information herein are subject to change without notice.
HDTMOS and WaveFET are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
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by MMSF3300/D-
SEMICONDUCTOR TECHNICAL DATA
