MMSF10N02Z ,SINGLE TMOS POWER MOSFET 10 AMPERES 20 VOLTSELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
MMSF1308 ,Power MOSFET 7 Amps, 30 Volts3R , DRAIN-TO-SOURCE RESISTANCE R , DRAIN-TO-SOURCE RESISTANCE (OHMS) I , DRAIN CURRENT (AMPS)DS(on ..
MMSF3300 ,SINGLE TMOS POWER MOSFET 30 VOLTSMAXIMUM RATINGS (T = 25°C unless otherwise specified)JParameter Symbol Value UnitDrain–to–Source Vo ..
MMSF3300R2 ,HDTMOS single N-channel field effect transistorMAXIMUM RATINGS (T = 25°C unless otherwise specified)JParameter Symbol Value UnitDrain–to–Source Vo ..
MMSF3350 ,Single N-Channel Field Effect TransistorMAXIMUM RATINGS (T = 25°C unless otherwise specified)JParameter Symbol Value UnitDrain–to–Source Vo ..
MMSF3P02HDR2 ,Power MOSFET 3 Amps, 20 Voltsblock diagram of the circuit configuration.SPICE, PSPICE, HSPICE, and Saber models available to dow ..
MPC18730EP , Power Management IC with Five Regulated Outputs Programmed Through 3 Wire Serial Interface
MPC2605ZP66 ,Integrated Secondary Cache for PowerPC Microprocessors**Order this documentby MPC2605/DSEMICONDUCTOR TECHNICAL DATAMPC2605Product PreviewIntegrated Secon ..
MPC506AP ,16-Channel Single-Ended Input Analog MultiplexerPIN CONFIGURATIONTop ViewTop View28 Out 28 Out A+V 1 +V 1SUPPLY SUPPLY –V27 –V Out B 2 27NC 2 SUPPL ..
MPC506APG4 , 16-Channel Single-Ended Input Analog MultiplexerELECTRICAL CHARACTERISTICSSupplies = +15V, –15V; V (Pin 13) = Open; V (Logic Level High) = +4.0V; V ..
MPC506AU ,16-Channel Single-Ended Input Analog MultiplexerPIN CONFIGURATIONTop ViewTop View28 Out 28 Out A+V 1 +V 1SUPPLY SUPPLY –V27 –V Out B 2 27NC 2 SUPPL ..
MPC506AU/1K ,16-Channel Single-Ended Input Analog MultiplexerMPC506MPC507MPC506AMPC507ASBFS018A – JANUARY 1988 – REVISED OCTOBER 2003Single-Ended 16-Channel/Dif ..
MMSF10N02Z
SINGLE TMOS POWER MOSFET 10 AMPERES 20 VOLTS
-
Medium Power Surface Mount Products ! -
EZFETs are an advanced series of power MOSFETs which
utilize Motorola’s High Cell Density HDTMOS process and contain
monolithic back–to–back zener diodes. These zener diodes
provide protection against ESD and unexpected transients. These
miniature surface mount MOSFETs feature low RDS(on) and true
logic level performance. They are capable of withstanding high
energy in the avalanche and commutation modes and the
drain–to–source diode has a very low reverse recovery time.
EZFET devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Zener Protected Gates Provide Electrostatic Discharge Protection Low RDS(on) Provides Higher Efficiency and Extends Battery Life Logic Level Gate Drive — Can Be Driven by Logic ICs Miniature SO–8 Surface Mount Package — Saves Board Space Diode Exhibits High Speed, With Soft Recovery IDSS Specified at Elevated Temperature Mounting Information for SO–8 Package Provided
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)(1) When mounted on 1 inch square FR–4 or G–10 board (VGS = 4.5 V, @ 10 Seconds)
DEVICE MARKING ORDERING INFORMATION
Designer’s Data for “Worst Case” Conditions— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves— representing boundaries on device characteristics— are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.Designer’s, HDTMOS and EZFET are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trade-
mark of the Bergquist Company.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMSF10N02Z/D
