MMSD914 ,Small Signal DiodeMMSD914MMSD914Top Marking:5DSOD123 Color Band Denotes CathodeTOP MARKING:SOD1235D ..
MMSD914T1 ,Switching DiodeTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitDEVICE MARKING(1)Total Device Dissipation FR–5 ..
MMSF10N02Z ,SINGLE TMOS POWER MOSFET 10 AMPERES 20 VOLTSELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
MMSF1308 ,Power MOSFET 7 Amps, 30 Volts3R , DRAIN-TO-SOURCE RESISTANCE R , DRAIN-TO-SOURCE RESISTANCE (OHMS) I , DRAIN CURRENT (AMPS)DS(on ..
MMSF3300 ,SINGLE TMOS POWER MOSFET 30 VOLTSMAXIMUM RATINGS (T = 25°C unless otherwise specified)JParameter Symbol Value UnitDrain–to–Source Vo ..
MMSF3300R2 ,HDTMOS single N-channel field effect transistorMAXIMUM RATINGS (T = 25°C unless otherwise specified)JParameter Symbol Value UnitDrain–to–Source Vo ..
MPC18730EP , Power Management IC with Five Regulated Outputs Programmed Through 3 Wire Serial Interface
MPC2605ZP66 ,Integrated Secondary Cache for PowerPC Microprocessors**Order this documentby MPC2605/DSEMICONDUCTOR TECHNICAL DATAMPC2605Product PreviewIntegrated Secon ..
MPC506AP ,16-Channel Single-Ended Input Analog MultiplexerPIN CONFIGURATIONTop ViewTop View28 Out 28 Out A+V 1 +V 1SUPPLY SUPPLY –V27 –V Out B 2 27NC 2 SUPPL ..
MPC506APG4 , 16-Channel Single-Ended Input Analog MultiplexerELECTRICAL CHARACTERISTICSSupplies = +15V, –15V; V (Pin 13) = Open; V (Logic Level High) = +4.0V; V ..
MPC506AU ,16-Channel Single-Ended Input Analog MultiplexerPIN CONFIGURATIONTop ViewTop View28 Out 28 Out A+V 1 +V 1SUPPLY SUPPLY –V27 –V Out B 2 27NC 2 SUPPL ..
MPC506AU/1K ,16-Channel Single-Ended Input Analog MultiplexerMPC506MPC507MPC506AMPC507ASBFS018A – JANUARY 1988 – REVISED OCTOBER 2003Single-Ended 16-Channel/Dif ..
MMSD914
Small Signal Diode
MMSD914 MMSD914 Top Marking: 5D SOD123 Color Band Denotes Cathode TOP MARKING: SOD123 5D BAND DENOTES CATHODE. Small Signal Diode Absolute Maximum Ratings* T = 25°C unless otherwise noted A Symbol Parameter Value Units V Maximum Repetitive Reverse Voltage 100 V RRM I Average Rectified Forward Current 200 mA F(AV) I Non-repetitive Peak Forward Surge Current FSM Pulse Width = 1.0 second 1.0 A Pulse Width = 1.0 microsecond 2.0 A Storage Temperature Range -55 to +150 °C T stg Operating Junction Temperature 150 T °C J *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics Symbol Parameter Value Units P Power Dissipation 400 mW D R Thermal Resistance, Junction to Ambient 312 C/W ° θJA Electrical Characteristics T = 25°C unless otherwise noted A Symbol Parameter Test Conditions Min Max Units V Breakdown Voltage V I = 5.0 μA 75 R R V I = 100 A 100 μ R V Forward Voltage V F I = 10 mA 1.0 F I Reverse Current V = 20 V 25 nA R R 50 A V = 20 V, T = 150°C μ R A V = 75 V 5.0 μA R C Total Capacitance 4.0 pF T V = 0, f = 1.0 MHz R Reverse Recovery Time I = I = 30 mA, I = 3.0 mA, 50 ns t F R RR rr R = 100 Ω L MMSD914, Rev. B 2001
