MMSD459A ,Small Signal DiodeElectrical Characteristics T = 25°C unless otherwise noted A Symbol Parameter Test Conditions Min ..
MMSD701 ,SOD-123 Schottky Barrier DiodesELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
MMSD914 ,Small Signal DiodeMMSD914MMSD914Top Marking:5DSOD123 Color Band Denotes CathodeTOP MARKING:SOD1235D ..
MMSD914T1 ,Switching DiodeTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitDEVICE MARKING(1)Total Device Dissipation FR–5 ..
MMSF10N02Z ,SINGLE TMOS POWER MOSFET 10 AMPERES 20 VOLTSELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
MMSF1308 ,Power MOSFET 7 Amps, 30 Volts3R , DRAIN-TO-SOURCE RESISTANCE R , DRAIN-TO-SOURCE RESISTANCE (OHMS) I , DRAIN CURRENT (AMPS)DS(on ..
MPC17C724EP , 0.4 A Dual H-Bridge Motor Driver IC
MPC18730EP , Power Management IC with Five Regulated Outputs Programmed Through 3 Wire Serial Interface
MPC2605ZP66 ,Integrated Secondary Cache for PowerPC Microprocessors**Order this documentby MPC2605/DSEMICONDUCTOR TECHNICAL DATAMPC2605Product PreviewIntegrated Secon ..
MPC506AP ,16-Channel Single-Ended Input Analog MultiplexerPIN CONFIGURATIONTop ViewTop View28 Out 28 Out A+V 1 +V 1SUPPLY SUPPLY –V27 –V Out B 2 27NC 2 SUPPL ..
MPC506APG4 , 16-Channel Single-Ended Input Analog MultiplexerELECTRICAL CHARACTERISTICSSupplies = +15V, –15V; V (Pin 13) = Open; V (Logic Level High) = +4.0V; V ..
MPC506AU ,16-Channel Single-Ended Input Analog MultiplexerPIN CONFIGURATIONTop ViewTop View28 Out 28 Out A+V 1 +V 1SUPPLY SUPPLY –V27 –V Out B 2 27NC 2 SUPPL ..
MMSD459A
Small Signal Diode
MMSD459A — Small Signal Diode August 2011 MMSD459A Small Signal Diode SOD123 Color Band Denotes Cathode Top Marking: 22 Absolute Maximum Ratings* T = 25°C unless otherwise noted A Symbol Parameter Value Units V Maximum Repetitive Reverse Voltage 100 V RRM I Average Rectified Forward Current 200 mA F(AV) I Non-repetitive Peak Forward Surge Current FSM Pulse Width = 1.0 second 1.0 A Pulse Width = 1.0 microsecond 4.0 A T Storage Temperature Range -55 to +150 °C STG T Operating Junction Temperature 150 °C J * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 200 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol Parameter Value Units P Power Dissipation 400 mW D R Thermal Resistance, Junction to Ambient 312 °C/W θJA Electrical Characteristics T = 25°C unless otherwise noted A Symbol Parameter Test Conditions Min. Max. Units V Breakdown Voltage I = 100μA 200 V R R V Forward Voltage I = 100mA 1.0 V F F I Reverse Leakage V = 175V 25 nA R R V = 175V, T = 150°C 5.0 μA R A C Total Capacitance V = 0, f = 1.0MHz 6.0 pF T R © 2011 MMSD459A Rev. A0 1
