MMSD3070 ,Small Signal DiodeMMSD3070MMSD3070 Top Marking: 5HSOD123Color Band Denotes CathodeTop Marking:SOD12333BAND DENOT ..
MMSD4148 ,Switching Diode
MMSD4148T1 ,Switching DiodeTHERMAL CHARACTERISTICS1Characteristic Symbol Max UnitSOD−123CASE 425Total Device Dissipation FR−5 ..
MMSD4148T1 ,Switching DiodeELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Max UnitOFF ..
MMSD4448 ,Small Signal DiodeMMSD4448 Small Signal DiodeJune 2005MMSD4448Small Signal DiodeSOD123Color Band Denotes CathodeTop ..
MMSD459A ,Small Signal DiodeElectrical Characteristics T = 25°C unless otherwise noted A Symbol Parameter Test Conditions Min ..
MPC17C724EP , 0.4 A Dual H-Bridge Motor Driver IC
MPC18730EP , Power Management IC with Five Regulated Outputs Programmed Through 3 Wire Serial Interface
MPC2605ZP66 ,Integrated Secondary Cache for PowerPC Microprocessors**Order this documentby MPC2605/DSEMICONDUCTOR TECHNICAL DATAMPC2605Product PreviewIntegrated Secon ..
MPC506AP ,16-Channel Single-Ended Input Analog MultiplexerPIN CONFIGURATIONTop ViewTop View28 Out 28 Out A+V 1 +V 1SUPPLY SUPPLY –V27 –V Out B 2 27NC 2 SUPPL ..
MPC506APG4 , 16-Channel Single-Ended Input Analog MultiplexerELECTRICAL CHARACTERISTICSSupplies = +15V, –15V; V (Pin 13) = Open; V (Logic Level High) = +4.0V; V ..
MPC506AU ,16-Channel Single-Ended Input Analog MultiplexerPIN CONFIGURATIONTop ViewTop View28 Out 28 Out A+V 1 +V 1SUPPLY SUPPLY –V27 –V Out B 2 27NC 2 SUPPL ..
MMSD3070
Small Signal Diode
MMSD3070 MMSD3070 Top Marking: 5H SOD123 Color Band Denotes Cathode Top Marking: SOD123 33 BAND DENOTES CATHODE. Small Signal Diode Absolute Maximum Ratings* T = 25°C unless otherwise noted A Symbol Parameter Value Units V Maximum Repetitive Reverse Voltage 200 V RRM I Average Rectified Forward Current 200 mA F(AV) I Non-repetitive Peak Forward Surge Current FSM Pulse Width = 1.0 second 1.0 A Pulse Width = 1.0 microsecond 2.0 A Storage Temperature Range -55 to +150 °C T stg Operating Junction Temperature 150 T °C J *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics Symbol Parameter Value Units P Power Dissipation 400 mW D Thermal Resistance, Junction to Ambient 312 R °C/W θJA Electrical Characteristics T = 25°C unless otherwise noted A Symbol Parameter Test Conditions Min Max Units V Breakdown Voltage V 200 R I = 100 μA R V Forward Voltage V F I = 100 mA 1.0 F I Reverse Current V = 175 V 100 nA R R = 175 V, T = 150 C 100 A V ° μ R A C Total Capacitance 5.0 pf T V = 0, f = 1.0 MHz R Reverse Recovery Time I = I = 30 mA, 50 ns t F R rr I = 1.0 mA, R = 100 Ω RR L MMSD3070, Rev. A 2002
