MMPQ2222 ,NPN Multi-Chip General Purpose AmplifierMMPQ2222MMPQ2222B4E4NPN Multi-Chip General Purpose AmplifierB3E3B2• This device is for use as a med ..
MMPQ2222A ,SURFACE MOUNT NPN SILICON QUAD TRANSISTOR3V , COLLECTOR-EMITTER VOLTAGE (VOLTS) h , DC CURRENT GAINCE FEMMPQ2222A200 500V = 30 VI /I = 10CCC ..
MMPQ2222AD ,Quad General Purpose Transistor NPN Silicon2MMPQ2222AINFORMATION FOR USING THE SO–16 SURFACE MOUNT PACKAGEMINIMUM RECOMMENDED FOOTPRINT FOR SU ..
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MMPQ2369 , NPN Switching Transistor [Not recommended for new designs]ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)ACharacteristic Symbol Min ..
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MPC104AU ,Wide-Bandwidth 2 x 1 VIDEO MULTIPLEXER
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MMPQ2222
NPN Multi-Chip General Purpose Amplifier
MMPQ2222 MMPQ2222 B4 E4 NPN Multi-Chip General Purpose Amplifier B3 E3 B2 • This device is for use as a medium power amplifier and switch E2 B1 requiring collector currents up to 500mA. C4 E1 C4 C3 • Sourced from process 19. C3 C2 C2 C1 C1 SOIC-16 Mark: MMPQ2222 Absolute Maximum Ratings * T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Emitter Voltage 30 V CEO V Collector-Base Voltage 60 V CBO V Emitter-Base Voltage 5.0 V EBO I Collector Current - Continuous 500 mA C T , T Operating and Storage Junction Temperature Range - 55 ~ +155 °C J STG * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units Off Characteristics V Collector-Emitter Breakdown Voltage * I = 10mA, I = 0 30 V (BR)CEO C B V Collector-Base Breakdown Voltage I = 10μA, I = 0 60 V (BR)CBO C E V Emitter-Base Breakdown Voltage I = 10μA, I = 0 5.0 V (BR)EBO C C I Collector Cutoff Current V = 50V, I = 0 50 nA CBO CB E I Emitter Cutoff Current V = 3.0V, I = 0 50 nA EBO EB C On Characteristics * h DC Current Gain I = 10mA, V = 10V 75 FE C CE I = 150mA, V = 1.0V * 100 C CE I = 150mA, V = 1.0V * 50 C CE V Collector-Emitter Saturation Voltage * I = 150mA, I = 15mA 0.4 V CE(sat) C B I = 500mA, I = 50mA 1.6 V C B V Base-Emitter Saturation Voltage * I = 150mA, I = 15mA 1.3 V BE(sat) C B I = 500mA, I = 50mA 2.6 V C B Small Signal Characteristics f Current GAin Bandwidth Product I = 20mA, V = 20V, 300 MHz T C CE f = 100MHz C Output Capacitance V = 10V, I = 0, f = 100kHz 4.0 pF obo CB E C Input Capacitance V = 0.5V, I = 0, f = 100kHz 20 pF ibo EB E NF Noise Figure I = 100μA, V = 10V, 2.0 dB C CE R = 1.0kΩ, f = 1.0kHz S * Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0% ©2004 Rev. A, October 2004
