MMJT9435T1 ,PNP Bipolar Power TransistorTHERMAL CHARACTERISTICSÎÎÎÎÎÎCharacteristic Symbol Max UnitÎÎThermal Resistance, Junction−to−Case R ..
MMJT9435T3 ,PNP Bipolar Power TransistorMaximum ratings applied to the device are individual stress limitÎvalues (not normal operating cond ..
MMM6025R2 , Quad-Band GSM/GPRS Power Amplifier Front-End Module with PA and Antenna Switch
MMPQ2222 ,NPN Multi-Chip General Purpose AmplifierMMPQ2222MMPQ2222B4E4NPN Multi-Chip General Purpose AmplifierB3E3B2• This device is for use as a med ..
MMPQ2222A ,SURFACE MOUNT NPN SILICON QUAD TRANSISTOR3V , COLLECTOR-EMITTER VOLTAGE (VOLTS) h , DC CURRENT GAINCE FEMMPQ2222A200 500V = 30 VI /I = 10CCC ..
MMPQ2222AD ,Quad General Purpose Transistor NPN Silicon2MMPQ2222AINFORMATION FOR USING THE SO–16 SURFACE MOUNT PACKAGEMINIMUM RECOMMENDED FOOTPRINT FOR SU ..
MP8780JS , CMOS 8 BIT VIDEO ANALOG TO DIGITAL CONVERTER
MP8780JS , CMOS 8 BIT VIDEO ANALOG TO DIGITAL CONVERTER
MP8786AS , CMOS 30 MSPS, 8Bit High-Speed, Low Power Analog-to-Digital Converter with Power Down
MP8786AS , CMOS 30 MSPS, 8Bit High-Speed, Low Power Analog-to-Digital Converter with Power Down
MP8799AE , CMOS Very Low Power, 1 MSPS, 10-Bit Analog-to-Digital Converter with 8-Channel Mux
MP8799AE , CMOS Very Low Power, 1 MSPS, 10-Bit Analog-to-Digital Converter with 8-Channel Mux
MMJT9435T1-MMJT9435T3
PNP Bipolar Power Transistor
MMJT9435
Preferred Device Bipolar Power T ransistors
PNP Silicon
Features Pb−Free Packages are Available Collector −Emitter Sustaining Voltage −
VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc High DC Current Gain −
hFE = 125 (Min) @ IC = 0.8 Adc
= 90 (Min) @ IC = 3.0 Adc Low Collector −Emitter Saturation Voltage −
VCE(sat) = 0.275 Vdc (Max) @ IC = 1.2 Adc
= 0.55 Vdc (Max) @ IC = 3.0 Adc SOT−223 Surface Mount Packaging Epoxy Meets UL 94, V−0 @ 0.125 in ESD Ratings: Human Body Model, 3B; > 8000 V
Machine Model, C; > 400 V
