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Partno	Mfg	Dc	Qty	Available	Descript
MMJT9410T1		N/a	33	avai	NPN Bipolar Power Transistor
MMJT9410T1	ON	N/a	1000	avai	NPN Bipolar Power Transistor

MMJT9410T1 ,NPN Bipolar Power TransistorELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)CÎCharacteristic Symbol Min Typ Max Uni ..
MMJT9410T1 ,NPN Bipolar Power Transistor3V, VOLTAGE (V) H , DC CURRENT GAIN V , COLLECTOR-EMITTER VOLTAGE (V)FE CE(sat)V, VOLTAGE (V) H , D ..
MMJT9435 ,Bipolar Power TransistorsMAXIMUM RATINGS (T = 25°C unless otherwise noted)CÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating Symbol V ..
MMJT9435T1 ,PNP Bipolar Power TransistorTHERMAL CHARACTERISTICSÎÎÎÎÎÎCharacteristic Symbol Max UnitÎÎThermal Resistance, Junction−to−Case R ..
MMJT9435T3 ,PNP Bipolar Power TransistorMaximum ratings applied to the device are individual stress limitÎvalues (not normal operating cond ..
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MP8780JS , CMOS 8 BIT VIDEO ANALOG TO DIGITAL CONVERTER
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MP8786AS , CMOS 30 MSPS, 8Bit High-Speed, Low Power Analog-to-Digital Converter with Power Down
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MP8799AE , CMOS Very Low Power, 1 MSPS, 10-Bit Analog-to-Digital Converter with 8-Channel Mux

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MMJT9410T1
NPN Bipolar Power Transistor
Bipolar Power T ransistors
NPN Silicon Collector –Emitter Sustaining V oltage —
VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc High DC Current Gain —
hFE = 85 (Min) @ IC = 0.8 Adc
= 60 (Min) @ IC = 3.0 Adc Low Collector –Emitter Saturation Voltage —
VCE(sat) = 0.2 Vdc (Max) @ IC = 1.2 Adc
= 0.45 Vdc (Max) @ IC = 3.0 Adc SOT–223 Surface Mount Packaging
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C 2,4
B 1 E 3

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