MMFT5P03HDT1 ,Power MOSFET 5 Amps, 30 Voltsenergy in the avalanche and commutation modes and thedrain–to–source diode has a very low reverse r ..
MMFT5P03HDT3 ,Power MOSFET 5 Amps, 30 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Typ Max Unit ..
MMFT960T1 ,MEDIUM POWER TMOS FET 300 mA 60 VOLTS3V, GATE-TO-SOURCE VOLTAGE (VOLTS) I , DRAIN CURRENT (AMPS) R , DRAIN-SOURCE RESISTANCE (OHMS)GS D ..
MMFT960T1G ,Power MOSFET 300 mA, 60 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
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MP8780JS , CMOS 8 BIT VIDEO ANALOG TO DIGITAL CONVERTER
MMFT5P03HD-MMFT5P03HDT1
Power MOSFET 5 Amps, 30 Volts
MMFT5P03HD
Preferred DevicePower MOSFET5 Amps, 30 Volts
P–Channel SOT–223This miniature surface mount MOSFET features ultra low RDS(on)
and true logic level performance. It is capable of withstanding high
energy in the avalanche and commutation modes and the
drain–to–source diode has a very low reverse recovery time.
MMFT5P03HD devices are designed for use in low voltage, high
speed switching applications where power efficiency is important.
Typical applications are dc–dc converters, and power management in
portable and battery powered products such as computers, printers,
cellular and cordless phones. They can also be used for low voltage
motor controls in mass storage products such as disk drives and tape
drives. The avalanche energy is specified to eliminate the guesswork
in designs where inductive loads are switched and offer additional
safety margin against unexpected voltage transients. Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery
Life Logic Level Gate Drive – Can Be Driven by Logic ICs Miniature SOT–223 Surface Mount Package – Saves Board Space Diode Is Characterized for Use In Bridge Circuits Diode Exhibits High Speed, With Soft Recovery IDSS Specified at Elevated Temperature Avalanche Energy Specified