MMFT3055V ,TMOS POWER FET 1.7 AMPERES 60 VOLTS3, DRAIN−TO−SOURCE RESISTANCE , DRAIN−TO−SOURCE RESISTANCE (OHMS) I , DRAIN CURRENT (AMPS)R RDS(on) ..
MMFT3055VL ,Power MOSFET 1 Amp, 60 Volts3, DRAIN−TO−SOURCE RESISTANCE , DRAIN−TO−SOURCE RESISTANCE (OHMS) I , DRAIN CURRENT (AMPS)R RDS(on) ..
MMFT5P03HD ,TMOS MEDIUM POWER FET 5.2 AMPERES 30 VOLTSELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Typ Max Unit ..
MMFT5P03HDT1 ,Power MOSFET 5 Amps, 30 Voltsenergy in the avalanche and commutation modes and thedrain–to–source diode has a very low reverse r ..
MMFT5P03HDT3 ,Power MOSFET 5 Amps, 30 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Typ Max Unit ..
MMFT960T1 ,MEDIUM POWER TMOS FET 300 mA 60 VOLTS3V, GATE-TO-SOURCE VOLTAGE (VOLTS) I , DRAIN CURRENT (AMPS) R , DRAIN-SOURCE RESISTANCE (OHMS)GS D ..
MP825 , MP800 Series Kool-Pak® Power Film Resistors
MP8775AQ , CMOS 20 MSPS, 8-Bit, High Speed Analog-to-Digital Converter
MP8775AQ , CMOS 20 MSPS, 8-Bit, High Speed Analog-to-Digital Converter
MP8780 , CMOS 8 BIT VIDEO ANALOG TO DIGITAL CONVERTER
MP8780JS , CMOS 8 BIT VIDEO ANALOG TO DIGITAL CONVERTER
MP8780JS , CMOS 8 BIT VIDEO ANALOG TO DIGITAL CONVERTER
MMFT3055V
TMOS POWER FET 1.7 AMPERES 60 VOLTS
MMFT3055V
Power MOSFET
1 Amp, 60 Volts
N−Channel SOT−223These Power MOSFETs are designed for low voltage, high speed
switching applications in power supplies, converters and power motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are critical
and offer additional safety margin against unexpected voltage
transients.
Features Avalanche Energy Specified IDSS and VDS(on) Specified at Elevated Temperature Pb−Free Package is Available
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)Stresses exceeding Maximum Ratings may damage the device. MaximumRatings are stress ratings only. Functional operation above the RecommendedOperating Conditions is not implied. Extended exposure to stresses above theRecommended Operating Conditions may affect device reliability.
