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MMDF6N02HDMOTOROLAN/a2907avaiDUAL TMOS POWER MOSFET 6.0 AMPERES 20 VOLTS


MMDF6N02HD ,DUAL TMOS POWER MOSFET 6.0 AMPERES 20 VOLTSELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
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MMDF6N02HD
DUAL TMOS POWER MOSFET 6.0 AMPERES 20 VOLTS
 -Medium Power Surface Mount Products - --
Dual HDTMOS devices are an advanced series of power
MOSFETs which utilize Motorola’s High Cell Density TMOS
process. These miniature surface mount MOSFETs feature low
RDS(on) and true logic level performance. Dual HDTMOS devices
are designed for use in low voltage, high speed switching
applications where power efficiency is important. Typical applica-
tions are dc–dc converters, and power management in portable
and battery powered products such as computers, printers, cellular
and cordless phones. They can also be used for low voltage motor
controls in mass storage products such as disk drives and tape
drives. Low RDS(on) Provides Higher Efficiency and Extends Battery Life Logic Level Gate Drive — Can Be Driven by Logic ICs Miniature SO–8 Surface Mount Package — Saves Board Space Diode Is Characterized for Use In Bridge Circuits Diode Exhibits High Speed, With Soft Recovery IDSS Specified at Elevated Temperature Mounting Information for SO–8 Package Provided
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
DEVICE MARKING

(1) Mounted on 1” square FR4 or G–10 board (VGS = 4.5 V, @ 10 seconds).
ORDERING INFORMATION
Designer’s Data for “Worst Case” Conditions—
The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves— representing boundaries on device characteristics— are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.

Designer’s and HDTMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trademark of
the Bergquist Company.
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SEMICONDUCTOR TECHNICAL DATA

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