MMDF3N02HDR2 ,Power MOSFET 3 Amps, 20 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
MMDF3N02HDR2 ,Power MOSFET 3 Amps, 20 Volts3R , DRAIN-TO-SOURCE RESISTANCEDS(on)R , DRAIN-TO-SOURCE RESISTANCE (OHMS) I , DRAIN CURRENT (AMPS) ..
MMDF3N03HDR2 ,Power MOSFET 3 Amps, 30 Voltsblock diagram of the circuit configuration.SPICE, PSPICE, HSPICE, and Saber models available to dow ..
MMDF3N04HD ,Power MOSFET 3 Amps, 40 Volts N-Channel SO-8 Dualin the avalanche and commutation modes and the drain−to−source diodehas a very low reverse recovery ..
MMDF3N04HDR2 ,Power MOSFET 3 Amps, 40 Volts N-Channel SO-8 DualMAXIMUM RATINGS (T = 25°C unless otherwise noted)JRating Symbol Value UnitDrain−to−Source Voltage V ..
MMDF3N06VL ,Power MOSFET 3 Amps, 60 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
MP7616KN , 15 V CMOS 16-Bit Multiplying Digital-to-Analog Converter
MP7626JN , Microprocessor Compatible Buffered Multiplying 16-Bit Digital-to-Analog Converter
MP7626JN , Microprocessor Compatible Buffered Multiplying 16-Bit Digital-to-Analog Converter
MP7633JS , CMOS 10-BIT MULTIPLYING DIGITAL-TO-ANALOG CONVERTER
MP7633KS , CMOS 10-BIT MULTIPLYING DIGITAL-TO-ANALOG CONVERTER
MP7651AS , 8-Channel, Voltage Output 10 MHz Input Bandwidth 8-Bit Multiplying DACs with Serial Digital Data Port and Chip Select Decoder
MMDF2P03HD
Power MOSFET 2 Amps, 30 Volts
MMDF2P03HD
Power MOSFET
2 Amps, 30 Volts
P−Channel SO−8, DualThese miniature surface mount MOSFETs feature ultra low RDS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain−to−source diode has a very low reverse recovery time.
MiniMOS� devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc−dc converters, and power management in portable
and battery powered products such as computers, printers, cellular and
cordless phones. They can also be used for low voltage motor controls
in mass storage products such as disk drives and tape drives. The
avalanche energy is specified to eliminate the guesswork in designs
where inductive loads are switched and offer additional safety margin
against unexpected voltage transients.• Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery
Life• Logic Level Gate Drive − Can Be Driven by Logic ICs Miniature SO−8 Surface Mount Package − Saves Board Space Diode Is Characterized for Use In Bridge Circuits Diode Exhibits High Speed, With Soft Recovery IDSS Specified at Elevated Temperature Avalanche Energy Specified Mounting Information for SO−8 Package Provided Negative sign for P−Channel device omitted for clarity. Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided)
with one die operating, 10 sec. max.
