MMDF2P02ER2 ,Power MOSFET 2 Amps, 25 VoltsMAXIMUM RATINGS (T = 25°C unless otherwise noted) (Note 1.) 8JLYWWSTYLE 11Rating Symbol Value Unit1 ..
MMDF2P02HDR2 ,Power MOSFET 2 Amps, 20 VoltsApplications EngineerAPPLICATION NOTEINTRODUCTIONA new technology, HDTMOS, was recently introduced ..
MMDF2P02HDR2 ,Power MOSFET 2 Amps, 20 Volts3R , DRAIN-TO-SOURCE RESISTANCE R , DRAIN-TO-SOURCE RESISTANCE (OHMS) I , DRAIN CURRENT (AMPS)DS(on ..
MMDF2P02HDR2G , Power MOSFET 2 Amps, 20 Volts P−Channel SO−8, Dual
MMDF2P03HD ,Power MOSFET 2 Amps, 30 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Note 1.)CCharacteristic Symbol Min Ty ..
MMDF3N02HDR2 ,Power MOSFET 3 Amps, 20 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
MP7616KN , 15 V CMOS 16-Bit Multiplying Digital-to-Analog Converter
MP7626JN , Microprocessor Compatible Buffered Multiplying 16-Bit Digital-to-Analog Converter
MP7626JN , Microprocessor Compatible Buffered Multiplying 16-Bit Digital-to-Analog Converter
MP7633JS , CMOS 10-BIT MULTIPLYING DIGITAL-TO-ANALOG CONVERTER
MP7633KS , CMOS 10-BIT MULTIPLYING DIGITAL-TO-ANALOG CONVERTER
MP7651AS , 8-Channel, Voltage Output 10 MHz Input Bandwidth 8-Bit Multiplying DACs with Serial Digital Data Port and Chip Select Decoder
MMDF2P02ER2
Power MOSFET 2 Amps, 25 Volts
MMDF2P02E
Power MOSFET2 Amps, 25 Volts
P–Channel SO–8, DualThese miniature surface mount MOSFETs feature ultra low RDS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain–to–source diode has a low reverse recovery time. MiniMOS�
devices are designed for use in low voltage, high speed switching
applications where power efficiency is important. Typical applications
are dc–dc converters, and power management in portable and battery
powered products such as computers, printers, cellular and cordless
phones. They can also be used for low voltage motor controls in mass
storage products such as disk drives and tape drives. The avalanche
energy is specified to eliminate the guesswork in designs where
inductive loads are switched and offer additional safety margin against
unexpected voltage transients. Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery
Life Logic Level Gate Drive – Can Be Driven by Logic ICs Miniature SO–8 Surface Mount Package – Saves Board Space Diode Is Characterized for Use In Bridge Circuits Diode Exhibits High Speed, with Soft Recovery IDSS Specified at Elevated Temperatures Avalanche Energy Specified Mounting Information for SO–8 Package Provided
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) (Note 1.) Negative sign for P–Channel device omitted for clarity. Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided)
with one die operating, 10 sec. max.
