MMDF2C03HDR2 ,Dual Complementary 30VELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Note 3)ACharacteristic Symbol Polarit ..
MMDF2C03HDR2 ,Dual Complementary 30VMAXIMUM RATINGS (T = 25°C unless otherwise noted) (Note 1)JRating Symbol Value UnitD2C03 = Device C ..
MMDF2C03HDR2 ,Dual Complementary 30Vhigh energy in the avalanche and commutation modes and thedrain-to-source diode has a very low reve ..
MMDF2N02E ,DUAL TMOS MOSFET 3.6 AMPERES 25 VOLTSELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
MMDF2N02E ,DUAL TMOS MOSFET 3.6 AMPERES 25 VOLTS**Order this documentSEMICONDUCTOR TECHNICAL DATAby MMDF2N02E/D* * **Medium Power Surface Mount P ..
MMDF2N02ER2 ,Power MOSFET 2 Amps, 25 VoltsMAXIMUM RATINGS (T = 25°C unless otherwise noted)J CASE 7518LYWWSTYLE 11Rating Symbol Value UnitDra ..
MP7541BJN , 15 V CMOS Multiplying 12-Bit Digital-to-Analog Converter
MP7541BJN , 15 V CMOS Multiplying 12-Bit Digital-to-Analog Converter
MP7543JS , 5 V CMOS Serial Input 12-Bit Digital-to-Analog Converter
MP7616KN , 15 V CMOS 16-Bit Multiplying Digital-to-Analog Converter
MP7626JN , Microprocessor Compatible Buffered Multiplying 16-Bit Digital-to-Analog Converter
MP7626JN , Microprocessor Compatible Buffered Multiplying 16-Bit Digital-to-Analog Converter
MMDF2C03HD-MMDF2C03HDR2
Dual Complementary 30V
MMDF2C03HD
Preferred DevicePower MOSFET 2 Amps, 30 Volts
Complementary SO−8, DualThese miniature surface mount MOSFETs feature ultra low RDS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain-to-source diode has a very low reverse recovery time.
MiniMOS� devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc-dc converters, and power management in portable
and battery powered products such as computers, printers, cellular and
cordless phones. They can also be used for low voltage motor controls
in mass storage products such as disk drives and tape drives. The
avalanche energy is specified to eliminate the guesswork in designs
where inductive loads are switched and offer additional safety margin
against unexpected voltage transients. Ultra Low RDS(on) Provides Higher Efficiency and Extends
Battery Life Logic Level Gate Drive − Can Be Driven by Logic ICs Miniature SO-8 Surface Mount Package − Saves Board Space Diode Is Characterized for Use In Bridge Circuits Diode Exhibits High Speed, With Soft Recovery IDSS Specified at Elevated Temperature Avalanche Energy Specified Mounting Information for SO-8 Package Provided
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) (Note 1) Negative signs for P−Channel device omitted for clarity.
