MMDF2C02HD ,COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 20 VOLTSELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Polarity Min Typ ..
MMDF2C02HDR2 ,Power MOSFET 2 Amps, 20 VoltsMAXIMUM RATINGS (T = 25°C unless otherwise noted) (Note 1.)JD2C02CASE 7518LYWWRating Symbol Value U ..
MMDF2C03HD ,COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 30 VOLTSELECTRICAL CHARACTERISTICS − continued (T = 25°C unless otherwise noted) (Note 6)ACharacteristic Sy ..
MMDF2C03HDR2 ,Dual Complementary 30VELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Note 3)ACharacteristic Symbol Polarit ..
MMDF2C03HDR2 ,Dual Complementary 30VMAXIMUM RATINGS (T = 25°C unless otherwise noted) (Note 1)JRating Symbol Value UnitD2C03 = Device C ..
MMDF2C03HDR2 ,Dual Complementary 30Vhigh energy in the avalanche and commutation modes and thedrain-to-source diode has a very low reve ..
MP7541BJN , 15 V CMOS Multiplying 12-Bit Digital-to-Analog Converter
MP7541BJN , 15 V CMOS Multiplying 12-Bit Digital-to-Analog Converter
MP7543JS , 5 V CMOS Serial Input 12-Bit Digital-to-Analog Converter
MP7616KN , 15 V CMOS 16-Bit Multiplying Digital-to-Analog Converter
MP7626JN , Microprocessor Compatible Buffered Multiplying 16-Bit Digital-to-Analog Converter
MP7626JN , Microprocessor Compatible Buffered Multiplying 16-Bit Digital-to-Analog Converter
MMDF2C02HD
COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 20 VOLTS
-
Medium Power Surface Mount Products- --
MiniMOS devices are an advanced series of power MOSFETs
which utilize Motorola’s High Cell Density HDTMOS process.
These miniature surface mount MOSFETs feature ultra low RDS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain–to–source diode has a very low reverse recovery time.
MiniMOS devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc–dc converters, and power management in
portable and battery powered products such as computers,
printers, cellular and cordless phones. They can also be used for
low voltage motor controls in mass storage products such as disk
drives and tape drives. The avalanche energy is specified to
eliminate the guesswork in designs where inductive loads are
switched and offer additional safety margin against unexpected
voltage transients. Ultra Low RDS(on) Provides Higher Efficiency and Extends
Battery Life Logic Level Gate Drive — Can Be Driven by Logic ICs Miniature SO–8 Surface Mount Package — Saves Board Space Diode Is Characterized for Use In Bridge Circuits Diode Exhibits High Speed, With Soft Recovery Avalanche Energy Specified Mounting Information for SO–8 Package Provided
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)(1)
DEVICE MARKING(1) Negative signs for P–Channel device omitted for clarity.
(2) Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided) with one die operating, 10 sec. max.
ORDERING INFORMATION
Designer’s Data for “Worst Case” Conditions— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves— representing boundaries on device characteristics— are given to facilitate “worst case” design.
HDTMOS and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
P–Channel
N–Channel
