MMDF2C02ER2 ,Power MOSFET 2.5 Amps, 25 VoltsMAXIMUM RATINGS (T = 25°C unless otherwise noted) (Note 1)J18Rating Symbol Value UnitSO−8F2C02Drain ..
MMDF2C02HD ,COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 20 VOLTSELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Polarity Min Typ ..
MMDF2C02HDR2 ,Power MOSFET 2 Amps, 20 VoltsMAXIMUM RATINGS (T = 25°C unless otherwise noted) (Note 1.)JD2C02CASE 7518LYWWRating Symbol Value U ..
MMDF2C03HD ,COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 30 VOLTSELECTRICAL CHARACTERISTICS − continued (T = 25°C unless otherwise noted) (Note 6)ACharacteristic Sy ..
MMDF2C03HDR2 ,Dual Complementary 30VELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Note 3)ACharacteristic Symbol Polarit ..
MMDF2C03HDR2 ,Dual Complementary 30VMAXIMUM RATINGS (T = 25°C unless otherwise noted) (Note 1)JRating Symbol Value UnitD2C03 = Device C ..
MP7529BJS , 5 V CMOS Dual Buffered Multiplying 8-Bit Digital-to-Analog Converter
MP7529BJS , 5 V CMOS Dual Buffered Multiplying 8-Bit Digital-to-Analog Converter
MP7529BJS , 5 V CMOS Dual Buffered Multiplying 8-Bit Digital-to-Analog Converter
MP7529BKS , 5 V CMOS Dual Buffered Multiplying 8-Bit Digital-to-Analog Converter
MP7529BKS , 5 V CMOS Dual Buffered Multiplying 8-Bit Digital-to-Analog Converter
MP7541BJN , 15 V CMOS Multiplying 12-Bit Digital-to-Analog Converter
MMDF2C02ER2
Power MOSFET 2.5 Amps, 25 Volts
MMDF2C02E
Power MOSFET
2.5 Amps, 25 Volts
Complementary SO−8, DualThese miniature surface mount MOSFETs feature ultra low RDS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain−to−source diode has a low reverse recovery time. MiniMOS�
devices are designed for use in low voltage, high speed switching
applications where power efficiency is important. Typical applications
are dc−dc converters, and power management in portable and battery
powered products such as computers, printers, cellular and cordless
phones. They can also be used for low voltage motor controls in mass
storage products such as disk drives and tape drives. The avalanche
energy is specified to eliminate the guesswork in designs where
inductive loads are switched and offer additional safety margin against
unexpected voltage transients. Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life Logic Level Gate Drive − Can Be Driven by Logic ICs Miniature SO−8 Surface Mount Package − Saves Board Space Diode Is Characterized for Use In Bridge Circuits Diode Exhibits High Speed, with Soft Recovery Avalanche Energy Specified Mounting Information for SO−8 Package Provided
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) (Note 1) Negative signs for P−Channel device omitted for clarity. Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided) with
one die operating, 10 sec. max.
