MMBZ6V8AL ,Zener TVSsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)AUNIDIRECTIONAL (Circuit tied to Pins 1 ..
MMBZ6V8AL ,Zener TVSs2DF3A6.8FUT1TYPICAL CHARACTERISTICS100t PEAK VALUE I @ 8 srPULSE WIDTH (t ) IS RSMP90DEFINED AS TH ..
MMBZ6V8ALT1 ,24 and 40 Watt Peak Power Zener Transient Voltage SuppressorsMAXIMUM RATINGSRating Symbol Value UnitPeak Power Dissipation @ 1.0 ms (Note 1) MMBZ5V6ALT1 thru MM ..
MMBZ9V1 ,24 and 40 Watt Peak Power Zener Transient Voltage SuppressorsFeaturesSOT−23xxxCASE 318• Pb−Free Packages are Available1STYLE 12• SOT−23 Package Allows Either Tw ..
MMBZ9V1AL-7-F , 24W AND 40W PEAK POWER DUAL SURFACE MOUNT TVS
MMC2147HJ-3 ,5 V, 4096 x 1-bit static RAMElectrical Characteristics TA = ty'C to +70°c, VCC = 5V _+ 10% (Notes1 and 2)
NM02147H-1
Symbol P ..
MP6750 ,Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsMP6750 TOSHIBA GTR Module Silicon N Channel IGBT MP6750 High Power Switching
MP6752 ,Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsMP6752 TOSHIBA GTR Module Silicon N Channel IGBT MP6752 High Power Switching
MP6754 ,Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsApplications The electrodes are isolated from case. 6 IGBTs are built into 1 package. Enh ..
MP6757 ,GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsMP6757 TOSHIBA GTR Module Silicon N Channel IGBT MP6757 High Power Switching
MP6759 ,GTR Module Silicon N Channel IGBT Motor Control Applications High Power Switching ApplicationsApplications The electrodes are isolated from case. 6 IGBTs are built into 1 package. ..
MP6801 ,Power MOS FET Module Silicon N / P Channel MOS TypeTHERMAL CHARACTERISTICSCHARACTERISTIC SYMBOLThermal Resistance of Junction to Ambient(6 Devices Ope ..
MMBZ6V8AL
Zener TVSs
DF3A6.8FUT1
Preferred DeviceZener Transient Voltage
Suppressor
Dual Common Anode Zeners for ESD
ProtectionThese dual monolithic silicon zener diodes are designed for
applications requiring transient overvoltage protection capability. They
are intended for use in voltage and ESD sensitive equipment such as
computers, printers, business machines, communication systems,
medical equipment and other applications. Their dual junction common
anode design protects two separate lines using only one package. These
devices are ideal for situations where board space is at a premium.
Features Pb−Free Package is Available SC−70 Package Allows Two Separate Unidirectional Configurations Low Leakage < 1.0 �A @ 5.0 V Breakdown Voltage: 6.4−7.2 V @ 5.0 mA ESD Protection Meeting:16 kV Human Body Model
30 kV Contact = IEC61000−4−2 Peak Power: 24 W @ 1.0 ms (Unidirectional), per Figure 1 Peak Power: 150 W @ 20 �s (Unidirectional), per Figure 2
Mechanical Characteristics Void Free, Transfer−Molded, Thermosetting Plastic Case Corrosion Resistant Finish, Easily Solderable Package Designed for Optimal Automated Board Assembly Small Package Size for High Density Applications
MAXIMUM RATINGSMaximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
