MMBZ5254B ,Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 27.0 V. Test current 4.6 mA.
MMBZ5254B ,Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 27.0 V. Test current 4.6 mA.Discrete POWER & SignalTechnologiesNMMBZ5226B - MMBZ5257B Series ZenersTolerance: B = 5%Absolute Ma ..
MMBZ5254B-7-F , 350mW SURFACE MOUNT ZENER DIODE
MMBZ5254BLT1 ,Small Signal 27V 5%ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted, V = 0.9 V Max. @ I = 10 mA)A F FZener ..
MMBZ5254BLT1 ,Small Signal 27V 5%MOTOROLASEMICONDUCTORTECHNICAL DATAGENERAL225 mW SOT-23DATAZener Voltage Regulator Diodes225 mWGENE ..
MMBZ5255B ,Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 28.0 V. Test current 4.5 mA.Electrical Characteristics TA = 25°C unless otherwise notedV Z I Z I V IZ Z ZT ZK ZK R @ R@ @D ..
MP6301 ,Power Transistor Module Silicon NPN&PNP Epitaxial Type (Darlington power transistor 6 in 1) High Power Switching Applications 3-Phase Motor Drive and Bipolar Drive of Pulse MotorElectrical Characteristics (Ta = 25°C) (NPN transistor) Characteristics Symbol Test Condition Min T ..
MP6403 ,HIGH POWER SWITCHING APPLICATION 3 PHASE MOTOR AND BIPOLAR DRIVE OF PULSE MOTORM P6403TOSHIBA POWER MOS FET MODULE SILICON N & P CHANNEL MOS TYPE (LZ-zr-MOSIV 6 IN 1)MP6403HIGH P ..
MP6404 ,Power MOS FET Module Silicon N&P Channel MOS Type (L2-pi-MOSV 6 in 1) High Power High Speed Switching Applications 3-Phase Motor Drive and Stepping Motor Drive ApplicationsThermal Characteristics Characteristics Symbol MaxUnit Thermal resistance of channel to ambient ΣR ..
MP6501 ,NPN TRIPLE DIFFUSED TYPE (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)TOSHIBA MP6501ATOSHIBA POWER TRANSISTOR MODULE SILICON NPN TRIPLE DIFFUSED TYPEMP6501AHIGH POWER SW ..
MP6501A ,NPN TRIPLE DIFFUSED TYPE (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)TOSHIBA MP6501ATOSHIBA POWER TRANSISTOR MODULE SILICON NPN TRIPLE DIFFUSED TYPEMP6501AHIGH POWER SW ..
MP6750 ,Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsMP6750 TOSHIBA GTR Module Silicon N Channel IGBT MP6750 High Power Switching
MMBZ5254B
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 27.0 V. Test current 4.6 mA.