MMBZ5235BLT1 ,Zener voltage regulator diodehttp://onsemi.com3Z , DYNAMIC IMPEDANCE () , TEMPERATURE COEFFICIENT (mV/°C)P , POWER DISSIPATIO ..
MMBZ5235BW-7-F , 200mW SURFACE MOUNT ZENER DIODE
MMBZ5235BW-7-F , 200mW SURFACE MOUNT ZENER DIODE
MMBZ5236B ,Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 7.5 V. Test current 20.0 mA.Discrete POWER & SignalTechnologiesNMMBZ5226B - MMBZ5257B Series ZenersTolerance: B = 5%Absolute Ma ..
MMBZ5236B-7-F , 350mW SURFACE MOUNT ZENER DIODE
MMBZ5236BLT1 ,Small Signal 7.5V 5%MOTOROLASEMICONDUCTORTECHNICAL DATAGENERAL225 mW SOT-23DATAZener Voltage Regulator Diodes225 mWGENE ..
MP4020 ,Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.Thermal Characteristics Characteristics Symbol MaxUnit Thermal resistance of junction to ambient 31 ..
MP4021 ,Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.Thermal Characteristics Characteristics Symbol MaxUnit Thermal resistance of junction to ambient 31 ..
MP4021. ,Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.Applications High Power Switching
MP4024 ,Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.Thermal Characteristics Characteristics Symbol MaxUnit Thermal resistance of junction to ambient 31 ..
MP4101 ,Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive. Inductive Load Switching.Thermal Characteristics Characteristics Symbol MaxUnit Thermal resistance of junction to ambient 31 ..
MP4104 ,Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.Thermal Characteristics Characteristics Symbol MaxUnit Thermal resistance of junction to ambient 31 ..
MMBZ5231BL-MMBZ5234BLT1-MMBZ5235BLT1-MMBZ5242BLT3-MMBZ5245BLT1-MMBZ5245BLT3-MMBZ5248BLT3-MMBZ5250BLT1-MMBZ5254BLT1-MMBZ5255BLT1-MMSZ5234B-MMSZ5240BT1
Small Signal 10V 5%
MMSZ5221ET1 Series
Preferred Device Zener Voltage Regulators
500 mW SOD−123 Surface MountThree complete series of Zener diodes are offered in the convenient,
surface mount plastic SOD−123 package. These devices provide a
convenient alternative to the leadless 34−package style.
Features Pb−Free Packages are Available 500 mW Rating on FR−4 or FR−5 Board Wide Zener Reverse Voltage Range − 2.4 V to 110 V Package Designed for Optimal Automated Board Assembly Small Package Size for High Density Applications General Purpose, Medium Current ESD Rating of Class 3 (>16 kV) per Human Body Model Peak Power − 225 W (8 x 20 �s)
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:260°C for 10 Seconds
POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL 94 V−0
MAXIMUM RATINGSMaximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected. Nonrepetitive current pulse per Figure 11. FR−5 = 3.5 x 1.5 inches, using the minimum recommended footprint. Thermal Resistance measurement obtained via infrared Scan Method.
