MMBZ5231B ,Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 5.1 V. Test current 20.0 mA.
MMBZ5231B ,Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 5.1 V. Test current 20.0 mA.
MMBZ5231B ,Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 5.1 V. Test current 20.0 mA.
MMBZ5231BL ,Small Signal 5.1V 5%http://onsemi.com2MMSZ5221ET1 SeriesTYPICAL CHARACTERISTICS8 1007 TYPICAL T VALUESCTYPICAL T VALUES ..
MMBZ5231BLT1 ,Small Signal 5.1V 5%MOTOROLASEMICONDUCTORTECHNICAL DATAGENERAL225 mW SOT-23DATAZener Voltage Regulator Diodes225 mWGENE ..
MMBZ5231BT-7-F , 150mW SURFACE MOUNT ZENER DIODE
MP34DT01TR ,MEMS audio sensor omnidirectional stereo digital microphoneFeaturesDescription Single supply voltage The MP34DT01 is an ultra-compact, low-power, Low power ..
MP3H6115A6T1 , High Temperature Accuracy Integrated Silicon Pressure Sensor for Measuring Absolute Pressure On-Chip Signal Conditioned, Temperature Compensat
MP3V5004DP , Integrated Silicon Pressure Sensor, On-Chip Signal Conditioned, Temperature Compensated and Calibrated
MP4005 ,40A, 50V ultra fast recovery rectifierElectrical Characteristics (Ta = 25°C) (NPN transistor) Characteristics Symbol Test Condition Min T ..
MP4006 ,Power Transistor Module Silicon NPN&PNP Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.Thermal Characteristics Characteristics Symbol MaxUnit Thermal resistance of junction to ambient 31 ..
MP4009 ,Power Transistor Module Silicon PNP Triple Diffused Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive. Inductive Load Switching.Thermal Characteristics Characteristics Symbol MaxUnit Thermal resistance of junction to ambient 31 ..
MMBZ5231B
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 5.1 V. Test current 20.0 mA.
