MMBZ5227B ,Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 3.6 V. Test current 20.0 mA.
MMBZ5227BLT1 ,SEMICONDUCTORMOTOROLASEMICONDUCTORTECHNICAL DATAGENERAL225 mW SOT-23DATAZener Voltage Regulator Diodes225 mWGENE ..
MMBZ5227BLT1G , Zener Voltage Regulators
MMBZ5228 ,Zener DiodesElectrical Characteristics (T = 25°C unless otherwise noted) Maximum V = 0.9 V at I = 10 mAA F FMax ..
MMBZ5228B ,Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 3.9 V. Test current 20.0 mA.Discrete POWER & SignalTechnologiesNMMBZ5226B - MMBZ5257B Series ZenersTolerance: B = 5%Absolute Ma ..
MMBZ5228BLT1 ,Small SignalELECTRICAL CHARACTERISTICSI(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (T = 25°CAIFunless otherwi ..
MP3213DH , 700KHz/1.3MHz Boost Converter with a 3.5A Switch Evaluation Board
MP3-306 , Ultra-Fast-Recovery Rectifier Diodes
MP34DT01TR ,MEMS audio sensor omnidirectional stereo digital microphoneFeaturesDescription Single supply voltage The MP34DT01 is an ultra-compact, low-power, Low power ..
MP3H6115A6T1 , High Temperature Accuracy Integrated Silicon Pressure Sensor for Measuring Absolute Pressure On-Chip Signal Conditioned, Temperature Compensat
MP3V5004DP , Integrated Silicon Pressure Sensor, On-Chip Signal Conditioned, Temperature Compensated and Calibrated
MP4005 ,40A, 50V ultra fast recovery rectifierElectrical Characteristics (Ta = 25°C) (NPN transistor) Characteristics Symbol Test Condition Min T ..
MMBZ5227B
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 3.6 V. Test current 20.0 mA.
