MMBV809LT1 ,Silicon Tuning DiodeELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic – All Types Symbol Min ..
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MMBV809LT1
Silicon Tuning Diode
Silicon T uning Diode
This device is designed for 900 MHz frequency control and tuning
applications. It provides solid–state reliability in replacement of
mechanical tuning methods. Controlled and Uniform Tuning Ratio Available in Surface Mount Package Available in 8 mm Tape and Reel
MAXIMUM RATINGS FR5 Board 1.0 x 0.75 x 0.62 in.
DEVICE MARKING
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) CR is the ratio of Ct measured at 2.0 Vdc divided by Ct measured at 8.0 Vdc.
ANODE
CATHODE
